X-On Electronics has gained recognition as a prominent supplier of PXAE213708NB-V1-R2 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PXAE213708NB-V1-R2 RF MOSFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PXAE213708NB-V1-R2 Wolfspeed

PXAE213708NB-V1-R2 electronic component of Wolfspeed
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Part No.PXAE213708NB-V1-R2
Manufacturer: Wolfspeed
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 370W Si LDMOS 28V 2100 to 2170MHz
Datasheet: PXAE213708NB-V1-R2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 89.93 ea
Line Total: USD 22482.5 
Availability - 0
MOQ: 250  Multiples: 250
Pack Size: 250
Availability Price Quantity
0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 250
Multiples : 250
250 : USD 89.93

   
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We are delighted to provide the PXAE213708NB-V1-R2 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PXAE213708NB-V1-R2 and other electronic components in the RF MOSFET Transistors category and beyond.

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Advance PXAE213708NB Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 2180 MHz Description Advance Specification Data Sheets describe products that are The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi- being considered by Wolfspeed for standard cellular power amplifier applications in the 2110 to 2180 MHz development and market intro- frequency band. Features include input matching, high gain and thermally- duction. The target performance enhanced package with earless flange. Manufactured with Wolfspeed s shown in Advance Specifications advanced LDMOS process, this device provides excellent thermal perform- is not final and should not be used ance and superior reliability. for any design activity. Please contact Wolfspeed about the fu- ture availability of these products. Features Broadband internal input and output matching Asymmetrical Doherty design - Main: P = 160 W Typ 3dB - Peak: P = 290 W Typ 3dB Typical Pulsed CW performance, 2180 MHz, 28 V, Doherty configuration, 10 s pulse width, 10% duty c ycle, class AB - Output power at P = 400 W 3dB - Power Added Efficienc y at P = 60.3% 3dB PXAE213708NB - Power Gain = 13.7 dB Package PG-HB2SOF-8-1 Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) V = 29 V, I = 750 mA, V = 1.5 V, P = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = DD DQ GSPEAK OUT 10 dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 16 dB ps Drain Efficienc y h 51 % D Adjacent Channel Power Ratio ACPR 27 dBc Output PAR at 0.01% probability on CCDF OPAR 8.7 dB All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 01, 2018-09-26 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.comAdvance PXAE213708NB 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 63 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance (main) V = 10 V, V = 0.1 V R TBD W GS DS DS(on) (peak) V = 10 V, V = 0.1 V R TBD W GS DS DS(on) Operating Gate Voltage (main) V = 28 V, I = 750 mA V 2.9 V DS DQ GS (peak) V = 28 V, I = 0 mA V 1.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J 65 to +150 C Storage Temperature Range T STG Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance R TBD C/W qJC Ordering Information Type and Version Order Code Package Description Shipping PXAE213708NB V1 R2 TBD PG-HB2SOF-8-1 Tape & Reel, 250 pcs Pinout Diagram (top vie w) V1 Main Peak V2 Pin Description V V D1 D2 D1 Drain De vice 1 (Main) D2 Drain De vice 2 (Peak) G1 Gate De vice 1(Main) G2 Gate De vice 2 (Peak) GND Ground V1, V2 Drain video decoupling, no DC bias G1 G2 Pg-hb2sof-8 06-20-2017 Lead connections for PXAE213708NB 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 01, 2018-09-26 GND GND

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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