X-On Electronics has gained recognition as a prominent supplier of PXAE263708NB-V1-R2 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PXAE263708NB-V1-R2 RF MOSFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PXAE263708NB-V1-R2 Wolfspeed

PXAE263708NB-V1-R2 electronic component of Wolfspeed
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Part No.PXAE263708NB-V1-R2
Manufacturer: Wolfspeed
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 370W Si LDMOS 28V 2496 to 2690MHz
Datasheet: PXAE263708NB-V1-R2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 103.04 ea
Line Total: USD 103.04 
Availability - 92
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 103.04
10 : USD 95.611
25 : USD 93.5295
50 : USD 93.5295
100 : USD 93.0005
250 : USD 89.9645
500 : USD 89.953
1000 : USD 89.93
2500 : USD 89.8955

   
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We are delighted to provide the PXAE263708NB-V1-R2 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PXAE263708NB-V1-R2 and other electronic components in the RF MOSFET Transistors category and beyond.

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PX AE263708NB Thermally-Enhanced High Power RF LDMOS FET 400 W (P ), 28 V, 2620 2690 MHz 3dB Description The PXAE263708NB is a 400-watt (P ) LDMOS FET intended for use 3dB in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed s advanced LDMOS process, this device PXAE263708NB provides excellent thermal performance and superior reliability. Package PG-HB2SOF-8-1 Features Single-carrier WCDMA Drive-up V = 28 V, I = 850 mA, = 2690 MHz Broadband internal input and output matching DQ DD 3GPP WCDMA signal, 10 dB PAR, Asymmetric Doherty design 3.84 MHz bandwidth - Main: P = 140 W Typ 1dB 24 60 - Peak: P = 260 W Typ 1dB Typical pulsed CW performance, 2655 MHz, 28 V, Efficiency 20 40 Doherty configuration, 10 s, 10% duty cycle, class AB - Output power at P = 200 W 1dB Gain 16 20 - Output power at P = 400 W 3dB - Efficiency = 49% (P = 57 W avg) OUT 12 0 - Gain = 15 dB (P = 57 W avg) OUT Capable of handling 10:1 VSWR 32 V, 100 W (CW) 8 -20 output power PAR 0.01% CCDF Integrated ESD protection 4 -40 Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) pxae263708nb-gr1a 0 -60 25 30 35 40 45 50 55 Low thermal resistance Pb-free and RoHS compliant Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V = 28 V, I = 850 mA, P = 57 W avg, V = 1.5 V, = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 DD DQ OUT GSPK dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 12.5 13.5 dB ps Drain Efficiency h 42.5 46.5 % D Adjacent Channel Power Ratio ACPR 27 23 dBc Output PAR at 0.01% probability on CCDF OPAR 7 7.7 dB All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 03.1, 2019-11-05 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Peak/Average Ratio, Gain (dB) Efficiency (%) PX AE263708NB 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 60 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance (main) V = 10 V, V = 0.1 V R 0.08 W GS DS DS(on) (peak) V = 10 V, V = 0.1 V R 0.04 W GS DS DS(on) Operating Gate Voltage (main) V = 28 V, I = 850 mA V 2.7 3.1 3.5 V DS DQ GS (peak) V = 28 V, I = 0 mA V 1.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J 65 to +150 C Storage Temperature Range T STG Thermal Characteristics T = 70C, V = 28 V, I = 850 mA, 2,655 MHz CASE DD DQ Characteristic Symbol Value Unit Thermal Resistance main - 57 W CW R 0.61 C/W qJC 0.25 C/W peak - 200 W CW R qJC Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD-020 260 C Ordering Information Type and Version Order Code Package and Description Shipping PXAE263708NB V1 R2 PXAE263708NB-V1-R2 PG-HB2SOF-8-1, overmold with Tape & Reel, 250 pcs earless flange Rev. 03.1, 2019-11-05 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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