PX AE263708NB Thermally-Enhanced High Power RF LDMOS FET 400 W (P ), 28 V, 2620 2690 MHz 3dB Description The PXAE263708NB is a 400-watt (P ) LDMOS FET intended for use 3dB in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed s advanced LDMOS process, this device PXAE263708NB provides excellent thermal performance and superior reliability. Package PG-HB2SOF-8-1 Features Single-carrier WCDMA Drive-up V = 28 V, I = 850 mA, = 2690 MHz Broadband internal input and output matching DQ DD 3GPP WCDMA signal, 10 dB PAR, Asymmetric Doherty design 3.84 MHz bandwidth - Main: P = 140 W Typ 1dB 24 60 - Peak: P = 260 W Typ 1dB Typical pulsed CW performance, 2655 MHz, 28 V, Efficiency 20 40 Doherty configuration, 10 s, 10% duty cycle, class AB - Output power at P = 200 W 1dB Gain 16 20 - Output power at P = 400 W 3dB - Efficiency = 49% (P = 57 W avg) OUT 12 0 - Gain = 15 dB (P = 57 W avg) OUT Capable of handling 10:1 VSWR 32 V, 100 W (CW) 8 -20 output power PAR 0.01% CCDF Integrated ESD protection 4 -40 Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) pxae263708nb-gr1a 0 -60 25 30 35 40 45 50 55 Low thermal resistance Pb-free and RoHS compliant Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V = 28 V, I = 850 mA, P = 57 W avg, V = 1.5 V, = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 DD DQ OUT GSPK dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 12.5 13.5 dB ps Drain Efficiency h 42.5 46.5 % D Adjacent Channel Power Ratio ACPR 27 23 dBc Output PAR at 0.01% probability on CCDF OPAR 7 7.7 dB All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 03.1, 2019-11-05 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Peak/Average Ratio, Gain (dB) Efficiency (%) PX AE263708NB 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 60 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance (main) V = 10 V, V = 0.1 V R 0.08 W GS DS DS(on) (peak) V = 10 V, V = 0.1 V R 0.04 W GS DS DS(on) Operating Gate Voltage (main) V = 28 V, I = 850 mA V 2.7 3.1 3.5 V DS DQ GS (peak) V = 28 V, I = 0 mA V 1.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J 65 to +150 C Storage Temperature Range T STG Thermal Characteristics T = 70C, V = 28 V, I = 850 mA, 2,655 MHz CASE DD DQ Characteristic Symbol Value Unit Thermal Resistance main - 57 W CW R 0.61 C/W qJC 0.25 C/W peak - 200 W CW R qJC Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD-020 260 C Ordering Information Type and Version Order Code Package and Description Shipping PXAE263708NB V1 R2 PXAE263708NB-V1-R2 PG-HB2SOF-8-1, overmold with Tape & Reel, 250 pcs earless flange Rev. 03.1, 2019-11-05 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com