About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH75T65SHDTL4


IGBT Transistors FS3 TIGBT Excellent switching performan
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USD 5.4889
Multiples of: 1

Single650 V1.6 V+/- 20 V150 A400 nA  TO - 247 - 4BulkSiThrough Hole455 W- 55 C+ 175 CFgh75t65shdtl4
FGH40T120SQDNL4


IGBT Transistors IGBT 1200V 40A UFS
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USD 5.4925
Multiples of: 1

Single1200 V1.78 V20 V160 A200 nA  TO - 247 - 4Tube Through Hole454 W- 55 C+ 175 C 
FGH75T65SHDT-F155


Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) TO-247 Tube
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USD 5.5466
Multiples of: 1

Single        TubeTrench|Field Stop     
FGH40T120SMDL4


Fairchild Semiconductor IGBT Transistors FS2 TIGBT excellent swtching performance
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USD 5.6176
Multiples of: 1

Single1.2 kV1.8 V+/- 25 V80 A+/- 400 nA  TO - 247 - 4TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smdl4
AFGY100T65SPD


IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3
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USD 5.7633
Multiples of: 450

        TO - 247 - 3Tube     Automotive, Aec - Q101
FGY40T120SMD


IGBT Transistors 1200V 40A FS2 Trench IGBT
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USD 6.625
Multiples of: 1

Single1.2 kV2 V+/- 30 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy40t120smd
FGH75T65UPD_F085


IGBT Transistors 650V/75A FS TRENCH IGBT
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USD 6.7725
Multiples of: 1

Single650 V2.21 V+/- 20 V150 A400 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CFgh75t65
FGL35N120FTDTU


Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT
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USD 6.854
Multiples of: 60

         TubeSi    Fgl35n120ftd
FGY75N60SMD


Transistor: IGBT; 600V; 75A; 375W; TO247
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USD 7.0031
Multiples of: 1

      375 W         
SGL160N60UFTU


IGBT Transistors 600V80A2.0V
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USD 7.1253
Multiples of: 1

Single600 V2.1 V+/- 20 V160 A+/- 100 nA250 W TO - 264 - 3Tube Through Hole - 55 C+ 150 CSgl160n60
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