About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MG100UZ12MRGJ-A2-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 34.1531

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KWMFP40R12NS3


IGBTs ROHS
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JUNSHINE Availability : 0
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USD 34.2328

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IXYT30N450HV


IGBT Transistors Disc IGBT XPT-Hi Voltage TO-268AA
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IXYS Availability : 0
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USD 34.341

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Single4.5 kV3.2 V20 V60 A200 nA  TO - 268HV - 2 SiSmd/Smt430 W- 55 C+ 150 C 
MMIX1X200N60B3H1


IGBT Transistors SMPD IGBTs Power Device
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IXYS Availability : 0
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USD 34.9831

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Single   175 A200 nA  SMD P - 21TubeSiSmd/Smt520 W- 55 C+ 150 CMmix1x200n60
IXGH25N250


IGBT Transistors IGBT NPT-VERY HI VOLTAGE
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IXYS Availability : 0
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USD 35.5735

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        TO - 247AD - 3TubeSi    Very High Voltage
KWMFP25R12NS3


IGBTs L1 RoHS
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JUNSHINE Availability : 0
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USD 36.1948

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APT100GN120B2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 0
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USD 36.4298

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      960 W   Field Stop     
GPU100HF120D1SE


IGBTs 34mm RoHS
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Daxin Semiconductor Availability : 0
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USD 36.604

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LEGM75TD120E2H


- IGBTs ROHS
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Leading Energy Availability : 0
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USD 37.2401

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IXYX25N250CV1HV


IGBT Transistors 2500V/95A , HV XPT IGBT Copacked
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IXYS Availability : 0
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USD 37.2822

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Single2.5 kV3.4 V20 V95 A+/- 100 nA  TO - 247PLUS - HV - 3TubeSiThrough Hole937 W- 55 C+ 175 CHigh Voltage
IXYX40N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 38.9702

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Single       TO - 247PLUS - 3Tube Through Hole1500 W+ 55 C+ 175 C 
MG100HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 39.7162

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IXBT12N300HV


IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 0
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USD 40.07

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         Tube      
VS-GA200SA60UP


IGBT Transistors N-Ch 600 Volt 100A
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Vishay Availability : 0
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USD 40.2247

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Single600 V +/- 20 V    SOT - 227 - 4TubeSiSmd/Smt - 55 C+ 150 C 
APT35GP120JDQ2


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 0
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USD 40.3269

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          POWER MOS 7®, PT     
IXGN100N160A


IGBT Transistors 100 Amps 1600V
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IXYS Availability : 0
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USD 40.4071

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         TubeSi    Ixgn100n160
VS-GP100TS60SFPBF


IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT
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Vishay Availability : 0
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USD 40.4435

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Dual600 V-20 V337 A+/- 500 nA  in T - A - PAK SiChassis781 W- 40 C+ 150 C 
APT45GP120J


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 40.704

Multiples of: 20

N - Channel1.2 kV3.3 V+/- 20 V34 A100 nA  SOT - 227 - 4TubeSiScrew329 W- 55 C+ 150 C 
IXGF36N300


IXYS IGBT Transistors
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IXYS Availability : 0
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USD 41.4557

Multiples of: 25

         TubeSi     
IXGN400N60A3


IGBT Transistors 400 Amps 600V
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IXYS Availability : 0
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USD 42.7929

Multiples of: 1

Single600 V1.25 V20 V400 A400 nA  SOT - 227BTubeSiSmd/Smt830 W- 55 C+ 150 CIxgn400n60
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