About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

STGP20V60F

STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 339
Ship by Tue. 23 Jul to Mon. 29 Jul

July 2024

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USD 0.91

Multiples of: 1

Single

600 V

2.2 V

20 V

40 A

250 nA

TO - 220 - 3

Tube

Through Hole

167 W

- 55 C

+ 175 C

600 - 650V Igbts

FGA25S125P_SN00337

Fairchild Semiconductor IGBT Transistors

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 339
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July 2024

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USD 3.3557

Multiples of: 1

Single

1250 V

1.8 V

6 V

50 A

500 nA

TO - 3PN

Bulk

Through Hole

250 W

- 55 C

+ 175 C

Fga25s125p

IXBH9N160G

IGBT Transistors 9 Amps 1600V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 339
Ship by Tue. 06 Aug to Fri. 09 Aug

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36	1	2	3	4	5	6	7

USD 4.9835

Multiples of: 1

Single

1600 V

4.9 V

20 V

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixbh9n160

AOTF10B60D2

Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega

Availability : 337
Ship by Tue. 23 Jul to Mon. 29 Jul

July 2024

July 2024
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USD 1.0194

Multiples of: 1

1.55 V

12 W

IGP30N60H3

Transistor: IGBT; 600V; 30A; 187W; TO220-3; Series: H3

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 336
Ship by Mon. 29 Jul to Wed. 31 Jul

July 2024

July 2024
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27	30	1	2	3	4	5	6
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USD 1.4835

Multiples of: 1

187 W

Trenchstop 5

IKP20N65H5XKSA1

Transistor: IGBT; 650V; 20A; 125W; TO220-3; Series: H5

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 336
Ship by Tue. 23 Jul to Mon. 29 Jul

July 2024

July 2024
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27	30	1	2	3	4	5	6
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USD 1.6311

Multiples of: 1

125 W

STGW30M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 329
Ship by Tue. 23 Jul to Mon. 29 Jul

July 2024

July 2024
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27	30	1	2	3	4	5	6
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USD 2.1057

Multiples of: 1

Single

650 V

1.55 V

+/- 20 V

60 A

+/- 250 nA

TO - 247 - 3

Through Hole

258 W

- 55 C

+ 175 C

Stgw30m65df2

BIDW30N60T

IGBT Transistors IGBT Discrete 600V, 30A in TO-247

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Bourns

Availability : 329
Ship by Mon. 29 Jul to Wed. 31 Jul

July 2024

July 2024
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USD 2.7

Multiples of: 1

Single

600 V

1.65 V

- 20 V , + 20 V

60 A

TO - 247 - 3

Tube

Through Hole

230 W

- 55 C

+ 150 C

BID

AOTF5B60D

Transistor: IGBT; 600V; 5A; 12.5W; TO220F; Eon:0.14mJ; Eoff:0.04mJ

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega

Availability : 323
Ship by Tue. 23 Jul to Mon. 29 Jul

July 2024

July 2024
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27	30	1	2	3	4	5	6
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USD 0.676

Multiples of: 1

1.55 V

12.5 W

RGTH50TS65GC11

ROHM Semiconductor IGBT Transistors

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

Availability : 323
Ship by Mon. 29 Jul to Wed. 31 Jul

July 2024