About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYX120N120B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 29
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USD 33.5317

Multiples of: 1

Single1.2 kV1.8 V20 V320 A200 nA  PLUS - 247 - 3 SiThrough Hole1.5 kW- 55 C+ 175 C 
IXBH10N300HV


IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD
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IXYS Availability : 29
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USD 80.6506

Multiples of: 1

Single3 kV2.2 V20 V34 A100 nA  TO - 247HV - 3 SiThrough Hole180 W- 55 C+ 150 C 
SL20T65FL


TO-247 IGBTs ROHS
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SLKORMICRO Availability : 28
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USD 0.999

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STGWA75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics Availability : 28
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USD 6.468

Multiples of: 1

Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole488 W- 55 C+ 175 CStgwa75m65df2
IXYH55N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
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IXYS Availability : 28
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USD 6.7966

Multiples of: 1

Single1200 V - 30 V , + 30 V240 A    Tube Through Hole1150 W- 55 C+ 175 C1200V XPTTM Gen 10
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS Availability : 28
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USD 10.6094

Multiples of: 1

Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
APT45GP120BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 28
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USD 17.8135

Multiples of: 1

Single1.2 kV3.3 V30 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
IXGH48N60B3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
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IXYS Availability : 28
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USD 26.7181

Multiples of: 1

 600 V1.8 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole300 W- 55 C+ 150 CIxgh48n60
Hot FGI3040G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 - 400V IGNITION IGBT
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ON Semiconductor Availability : 27
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USD 1.269

Multiples of: 1

Single400 V1.68 V+/- 10 V41 A   TO - 262AA - 3TubeSiThrough Hole150 W- 55 C+ 175 CFgi3040g2_F085
APT75GN120JDQ3


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 27
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USD 33.695

Multiples of: 1

Single1.2 kV1.7 V30 V124 A600 nA  SOT - 227 - 4BulkSiSmd/Smt379 W- 55 C+ 150 C 
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