About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PH30KDPBF


IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
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Infineon Availability : 0
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USD 2.109

Multiples of: 25

Single1.2 kV3.1 V+/- 20 V20 A 100 W TO - 247Tube Through Hole - 55 C+ 150 C 
IRGP6640DPBF


IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon Availability : 0
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USD 2.1102

Multiples of: 1

Single600 V1.65 V20 V53 A100 nA  TO - 247AC - 3Tube Through Hole200 W- 40 C+ 175 C 
IKP28N65ES5XKSA1


IGBT Transistors INDUSTRY 14
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USD 2.1105

Multiples of: 1

Single650 V1.5 V20 V38 A100 nA  TO - 220 - 3TubeSiThrough Hole130 W- 40 C+ 175 CIkp28
IRG4PC30KPBF


Transistor: IGBT; 600V; 28A; 100W; TO247-3
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Infineon Availability : 0
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USD 2.1202

Multiples of: 1

Single600 V2.7 V+/- 20 V28 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C  
IRGP4062-EPBF


IGBT Transistors IR IGBT 600V 600V 24A TO-247AD
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Infineon Availability : 0
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USD 2.1289

Multiples of: 1

 600 V2.04 V20 V48 A100 nA250 W TO - 247TubeSiThrough Hole250 W   
FGH80N60FDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor Availability : 0
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USD 2.1326

Multiples of: 10

      116 W         
IRG4PC40WPBF


Transistor: IGBT; 600V; 40A; 160W; TO247-3
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Infineon Availability : 0
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USD 2.1358

Multiples of: 1

Single600 V2.5 V+/- 20 V40 A 160 W TO - 247Tube Through Hole - 55 C  
IXYP8N90C3


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 2.1429

Multiples of: 1

Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
STGW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.1437

Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
RJH60F3DPQ-A0#T0


IGBT Transistors IGBT
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Renesas Availability : 0
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USD 2.1505

Multiples of: 1

         TubeSi     
STGW45HF60WDI


IGBT Transistors 45A 600V Ultra Fast IGBT
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STMicroelectronics Availability : 0
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USD 2.1577

Multiples of: 600

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wdi
IRGI4086PBF


IGBT Transistors 300V Plasma Display Panel
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Infineon Availability : 0
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USD 2.1579

Multiples of: 1

Single300 V1.55 V+/- 30 V25 A 43 W TO - 220 - 3 FPTubeSiThrough Hole43 W- 40 C  
STGW30N120KD


IGBT Transistors 30 A - 1200 V Rugged IGBT
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STMicroelectronics Availability : 0
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USD 2.1622

Multiples of: 600

Single1200 V +/- 25 V    TO - 247 - 3Tube Through Hole - 55 C+ 125 CStgw30n120kd
HGTG20N60A4D


Transistor: IGBT; 600V; 40A; 190W; TO247
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ON Semiconductor Availability : 0
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USD 2.1678

Multiples of: 1

                
IRG4IBC20KDPBF


Transistor: IGBT; 600V; 11.5A; 34W; TO220AB
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Infineon Availability : 0
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USD 2.1688

Multiples of: 1

Single600 V2.8 V+/- 20 V11.5 A 34 W TO - 220 - 3 FPTubeSiThrough Hole34 W- 55 C  
IRG4PC40FPBF


Transistor: IGBT; 600V; 49A; 160W; TO247-3
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Infineon Availability : 0
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USD 2.1751

Multiples of: 12

Single600 V1.7 V+/- 20 V49 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
SGH30N60RUFDTU


Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3PN Rail
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ON Semiconductor Availability : 0
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USD 2.1796

Multiples of: 450

Single        Rail/Tube      
HGTP12N60A4D


Transistor: IGBT; 600V; 23A; 167W; TO220
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ON Semiconductor Availability : 0
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USD 2.1867

Multiples of: 199

                
STGW35HF60WDI


STMicroelectronics IGBT Transistors 35 A 600 V Ultra fast IGBT
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STMicroelectronics Availability : 0
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USD 2.189

Multiples of: 1

         TubeSi    Stgw35hf60wdi
STGW45HF60WD


IGBT Transistors 45A 600V Ultra Fast IGBT
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STMicroelectronics Availability : 0
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USD 2.1914

Multiples of: 1

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wd
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