About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N65UFDTU-F085


IGBT Transistors N-ch / 40A 650V
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USD 2.5366

Multiples of: 1

Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
FGB40T65SPD-F085


IGBT Transistors Trench IGBT
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USD 2.5373

Multiples of: 1

Single650 V2.9 V+/- 20 V80 A+/- 400 nA  TO - 263 - 3Cut TapeSiSmd/Smt267 W- 55 C+ 175 CFgb40t65spd
NGTB30N60L2WG


N-CHANNEL IGBT WITH LOW VF SWITCHING DIODE 600V 30A VCE(sat); 1.4V
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USD 2.5373

Multiples of: 1

         TubeSi     
NGTG15N120FL2WG


IGBT Transistors 1200V/15A VERY FAST IGBT
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USD 2.54

Multiples of: 166

         TubeSi     
IHW30N110R3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 2.5413

Multiples of: 1

Single1100 V1.55 V20 V60 A100 nA333 W TO - 247TubeSiThrough Hole333 W- 40 C+ 175 CIhw30n110
STGFW30V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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STMicroelectronics Availability : 0
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USD 2.5476

Multiples of: 1

Single600 V1.85 V+/- 20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
FGH30S130P


Transistor: IGBT; 1.3kV; 30A; 250W; TO247
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USD 2.5552

Multiples of: 4

      250 W         
NGTG50N60FWG


IGBT Transistors 600V/50A IGBT NPT TO-247
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USD 2.5593

Multiples of: 1

Single600 V1.45 V30 V100 A200 nA223 W TO - 247TubeSiThrough Hole223 W- 55 C+ 150 CNgtg50n60fwg
IRG4PH40UD2-EP


IGBT Transistors 1200V UltraFast 5-40kHz
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Infineon Availability : 0
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USD 2.5611

Multiples of: 25

Single1.2 kV3.1 V+/- 20 V41 A100 nA160 W TO - 247ADTubeSiThrough Hole160 W- 55 C+ 150 C 
STGW50H65DFB2-4


IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
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STMicroelectronics Availability : 0
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USD 2.5787

Multiples of: 1

         Tube      
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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Alpha & Omega Availability : 0
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USD 2.587

Multiples of: 1

  1.57 V   170 W         
FGA4060ADF


IGBT Transistors 650V FS Gen3 Trench IGBT proliferation
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ON Semiconductor Availability : 0
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USD 2.5904

Multiples of: 163

Single600 V1.8 V30 V80 A400 nA  TO - 3PNBulkSiThrough Hole238 W- 55 C+ 175 CFga4060adf
IXGH36N60A3


IGBT Transistors GenX3 600V IGBTs
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IXYS Availability : 0
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USD 2.5916

Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh36n60
IRG8P08N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 2.5927

Multiples of: 1

Single1200 V1.7 V30 V15 A100 nA89 W TO - 247AC - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
STGWA19NC60HD


IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode
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STMicroelectronics Availability : 0
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USD 2.593

Multiples of: 1

Single600 V1.8 V+/- 20 V52 A+/- 100 nA208 W TO - 247TubeSiThrough Hole208 W- 55 C+ 150 CStgwa19nc60hd
FGH40N60SMD_F085


IGBT Transistors 600V/40A FS Planar IGBT Gen 2
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USD 2.6028

Multiples of: 3

Single600 V2.1 V+/- 20 V80 A400 nA349 W TO - 247 - 3 SiThrough Hole349 W- 55 C+ 175 CFgh40n60sm_F085
FGA20S120M


IGBT Transistors 1200V 20A SA FS
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USD 2.6073

Multiples of: 162

 1200 V1.55 V25 V40 A250 nA  TO - 3Tube Through Hole348 W- 55 C+ 150 CFga20s120m
RGTH80TS65DGC11


ROHM Semiconductor IGBT Transistors
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ROHM Availability : 0
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USD 2.6136

Multiples of: 1

 650 V1.6 V+/- 30 V70 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole234 W- 40 C+ 175 CRgth80ts65d
NGTB15N60S1EG


IGBT Transistors 15A 600V IGBT
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USD 2.6166

Multiples of: 1

 600 V1.7 V20 V30 A100 nA47 W TO - 220Tube Through Hole   Ngtb15n60s1
NGTB30N120IHLWG


IGBT Transistors IGBT 1200V 30A FS1 Induction Heating
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USD 2.6211

Multiples of: 1

Single1200 V1.75 V20 V60 A200 nA260 W TO - 247TubeSiThrough Hole260 W- 55 C+ 150 CNgtb30n120ihl
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