About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...96979899100...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH32N170


IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 9
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USD 15.822
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh32n170
SGM100HF12A1TFD


- IGBTs ROHS
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Silan Availability : 9
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USD 25.7316
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IKN03N60RC2ATMA1


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 8
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USD 0.6759
Multiples of: 1

                
SL40T65FL


IGBTs 650V 80A TO-247 RoHS
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SLKORMICRO Availability : 8
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USD 1.2997
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IXA30PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 8
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USD 14.6199
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Single1200 V1.9 V20 V43 A500 nA  ISOPLUS - 9 SiSmd/Smt150 W- 55 C+ 150 CIxa30pg1200dhglb
IXBT16N170A


IGBT Transistors 1700V 16A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 8
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USD 15.7734
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt150 W- 55 C+ 150 CIxbt16n170
IXGH24N170


IGBT Transistors 50 Amps 1700V 3.3 V Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 8
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USD 18.3754
Multiples of: 1

Single1.7 kV2.5 V20 V50 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n170
APT65GP60B2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 8
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USD 20.5
Multiples of: 1

      833 W   POWER MOS 7®, PT     
NTE3323


Transistor: IGBT; 1.2kV; 25A; 200W; TO3P
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NTE Availability : 8
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USD 31.1174
Multiples of: 1

      200 W         
SPT25N120U1


TO-247-3 IGBTs ROHS
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SPTECH Availability : 7
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USD 1.5992
Multiples of: 1

                
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