About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

FGA25S125P_SN00337

Fairchild Semiconductor IGBT Transistors

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ON Semiconductor

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USD 3.169

Multiples of: 1

Single

1250 V

1.8 V

6 V

50 A

500 nA

TO - 3PN

Bulk

Through Hole

250 W

- 55 C

+ 175 C

Fga25s125p

STGW25H120F2

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

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STMicroelectronics

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USD 3.1709

Multiples of: 30

Single

1200 V

2.1 V

20 V

50 A

250 nA

375 W

TO - 247 - 3

Tube

Through Hole

375 W

- 55 C

+ 175 C

Stgw25h120f2

NGTB40N120FLWG

IGBT Transistors IGBT, 1200 V, 40 A, FS1 Solar/UPS

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ON Semiconductor

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USD 3.1843

Multiples of: 100

Single

1200 V

2 V

25 V

80 A

200 nA

TO - 247

Tube

Through Hole

260 W

- 55 C

+ 150 C

Ngtb40n120fl

IHW20N120R3

IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body

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Infineon

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USD 3.1878

Multiples of: 1

Single

1200 V

1.48 V

6.4 V

40 A

100 nA

310 W

TO 247 - 3

Tube

Through Hole

310 W

- 40 C

+ 175 C

Ihw20n120

STGB30H60DLLFBAG

IGBT Transistors Automotive-grade trench gate field-stop IGBT HB series 600 V 30 A high speed

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STMicroelectronics

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USD 3.1897

Multiples of: 1

Single

600 V

1.7 V

20 V

30 A

250 uA

Aec - Q101

D2PAK - 3

Smd/Smt

260 W

- 55 C

+ 175 C

Stgb30h60dllfbag

IRG4PF50WDPBF

IGBT Transistors 900V Warp 20-100kHz

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Infineon

Availability : 0
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USD 3.1959

Multiples of: 1

Single

900 V

2.7 V

+/- 20 V

51 A

100 nA

200 W

TO - 247

Tube

Through Hole

200 W

- 55 C

+ 150 C

RGTV60TK65DGVC11

IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT

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ROHM

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USD 3.1968

Multiples of: 1

Single

650 V

1.5 V

30 V

33 A

200 nA

TO - 3PFM

Tube

Through Hole

76 W

- 40 C

+ 175 C

IXXQ30N60B3M

IGBT Transistors Disc IGBT XPT-GenX3 TO-3P (3)

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IXYS

Availability : 0
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USD 3.1989

Multiples of: 1

Single

600 V

1.66 V

20 V

33 A

100 nA

TO - 220FP - 3

Through Hole

90 W

- 55 C

+ 175 C

APT30GT60BRDQ2G

IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi

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Microchip

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USD 3.2034

Multiples of: 1

Single

TO - 247 - 3

Tube

Through Hole

IXGA12N120A3

IGBT Transistors 1200V, 12A IGBT; G Series

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IXYS

Availability : 0
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USD 3.2058

Multiples of: 1

Single

1.2 kV

2.4 V

20 V

22 A

100 nA

TO - 263AA - 3

Tube

Smd/Smt

100 W

- 55 C

+ 150 C

Ixga12n120

IRG4PH50S-EPBF

IGBT Transistors 1200V DC-1kHz w/ exetended lead

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Infineon

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USD 3.2109

Multiples of: 1

Single

1.2 kV

1.7 V

+/- 20 V

57 A

200 W

TO - 247AD

Tube

Through Hole

200 W

- 55 C

FGL60N100BNTD

Transistor: IGBT; 1kV; 42A; 72W; TO264

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ON Semiconductor

Availability : 0
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USD 3.223

Multiples of: 1

IXGH30N60B2D1

IGBT Transistors 30 Amps 600V 1.8 V Rds

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IXYS

Availability : 0
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USD 3.2292

Multiples of: 1

Single

600 V

+/- 20 V

TO - 247 - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixgh30n60

AOK50B65M2

Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega

Availability : 0
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USD 3.2295

Multiples of: 1

1.72 V

250 W

STGW50HF60S

Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247 Tube

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0
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USD 3.2303

Multiples of: 1

Single

Rail/Tube

IRG4PC50FPBF

Transistor: IGBT; 600V; 70A; 200W; TO247-3

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Infineon

Availability : 0
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USD 3.2475

Multiples of: 1

Single

600 V

1.6 V

+/- 20 V

70 A

200 W

TO - 247

Tube

Through Hole

200 W

- 55 C

IHW40N135R3FKSA1

IGBT Transistors IGBT PRODUCTS

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Infineon

Availability : 0
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USD 3.2488

Multiples of: 1

Single

1.35 kV

1.85 V

20 V

80 A

100 nA

215 W

TO - 247 - 3

Tube

Through Hole

429 W

- 40 C

+ 175 C

Ihw40n135

RJH60F7DPQ-A0#T0

IGBT Transistors IGBT

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Renesas

Availability : 0
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USD 3.2496

Multiples of: 1

Tube

NGTB40N120S3WG

IGBT Transistors IGBT 1200V 40A FS3 LOW VF

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ON Semiconductor

Availability : 0
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USD 3.256

Multiples of: 3

Single

1.2 kV

2.3 V

+/- 20 V

160 A

200 nA

TO - 247 - 3

Tube

Through Hole

454 W

- 55 C

+ 175 C

STGW45NC60VD

IGBT Transistors 45 A - 600 V Very Fast IGBT

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STMicroelectronics

Availability : 0
Ship by 6 to 16 Weeks

May 2025