About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDC7003P.*


DUAL P CHANNEL MOSFET, -60V, SUPER SOT-6
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USD 0.1989

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   P Channel               
NVTFS4C13NWFTWG


Trans MOSFET N-CH 30V 40A Automotive 8-Pin WDFN EP T/R
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USD 0.1991

Multiples of: 1

           Tape And Reel    enhancement  
FDMS7698_F065


Fairchild Semiconductor MOSFET 30V 22A 10mOhms N-Ch PowerTrench
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USD 0.2001

Multiples of: 1

22 A30 V10 mOhmsn - channel 2 V- 55 C+ 150 C29 Wsmd/smtPOWER - 56 - 8Reelsi1 channel+/- 20 V17 nCenhancement  
NTLUF4189NZTAG


MOSFET NFET WDFN6 30V 1.5A 200mOhm
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USD 0.2001

Multiples of: 1

1.5 A30 V145 mOhmsn - channel 1.1 V- 55 C+ 150 C1.3 Wsmd/smtUDFN - 6Reelsi1 channel8 V1.4 nC   
FDG6332C"F085


MOSFET, N AND P CHANNEL, 20V, 0.18OHM, 700mA, SC-70-6
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USD 0.2007

Multiples of: 1

   N And P Channel               
NTLUD4C26NTBG


MOSFET NFET UDFN6 30V 8.7A 21MOH
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USD 0.2008

Multiples of: 3000

         Smd/SmtTO - 263 - 3Cut TapeSi      
FDG410NZ


MOSFET 20V Single NChannel PowerTrench MOSFET
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USD 0.2012

Multiples of: 1

2.2 A20 V70 mOhmsn - channel  - 55 C+ 150 C420 mWsmd/smtSC70 - 6Reelsi1 channel8 V   powertrench
FQD7N10LTM


Transistor: N-MOSFET; unipolar; 100V; 3.67A; 25W; DPAK
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USD 0.2014

Multiples of: 2500

            qfet®      
FQD13N06TM


Fairchild Semiconductor MOSFET 60V N-Ch QFET
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USD 0.2021

Multiples of: 2500

10 A60 V140 mOhmsn - channel25 V - 55 C+ 150 C2.5 Wsmd/smtDPAK - 3Reelsi1 channel25 V enhancement  
FDD6630A


MOSFET 30V N-Ch PowerTrench
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USD 0.2025

Multiples of: 2500

21 A30 V28 mOhmsn - channel  - 55 C+ 175 C28 Wsmd/smtTO - 252AAReelsi1 channel20 V enhancement powertrench
EMH2408-TL-H


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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USD 0.2031

Multiples of: 2137

4 A20 V45 mOhmsn - channel     smd/smtEMH8 - 8Reelsi2 channel     
MCH6337-TL-H


MOSFET SWITCHING DEVICE
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USD 0.2031

Multiples of: 2137

4.5 A20 V35 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtMCPH6Reelsi1 channel10 V    
CPH6350-TL-E


ON Semiconductor MOSFET SWITCHING DEVICE
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USD 0.2039

Multiples of: 1

6 A- 30 V43 mOhmsp - channel20 V - 55 C+ 150 C1.6 Wsmd/smtSOT - 26 - 6Reelsi1 channel20 V13 nC   
SI3443DV


Transistor: P-MOSFET; unipolar; -20V; -1.6A; 1.6W; SuperSOT-6
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USD 0.2049

Multiples of: 2117

            Powertrench®      
NTNS3190NZT5G


ON Semiconductor MOSFET NFET XLLGA3 20V 230MA 1.4
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USD 0.2053

Multiples of: 8000

224 mA20 V650 mOhmsn - channel 400 mV- 55 C+ 150 C139 mWsmd/smtXLLGA - 3Reelsi1 channel8 V700 pCenhancement  
NTMFS4955NT3G


MOSFET NFET SO8FL 30V 48A 6MOHM
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USD 0.2053

Multiples of: 5000

16.7 A30 V5.6 mOhmsn - channel  - 55 C+ 150 C2.7 Wsmd/smtSO - 8 FLAT LEADReelsi1 channel20 V10.8 nCenhancement  
CPH3348-TL-E


MOSFET SWITCHING DEVICE
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USD 0.2064

Multiples of: 1

3 A12 V70 mOhmsp - channel  - 55 C+ 150 C1 Wsmd/smtCPH - 3Reelsi1 channel10 V    
CD8447DR2G


MOSFET QUAD CHANNEL VOLTAGE
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USD 0.2075

Multiples of: 2500

           Cut TapeSi      
MCH3383-TL-W


MOSFET PCH 0.9V DRIVE SERIES
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USD 0.2083

Multiples of: 3000

3.5 A12 V57 mOhmsP - Channel 800 mV- 5 C+ 150 C1 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel5 V6.2 nCEnhancement  
NVC6S5A444NLZT1G


MOSFET NCH4.5A60V4.5V DRIV E CPH6
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USD 0.2084

Multiples of: 1

           Cut Tape       
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