About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLUS3A18PZCTBG


Trans MOSFET P-CH 20V 8.2A 6-Pin UDFN EP T/R
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ON Semiconductor Availability : 0
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USD 0.278

Multiples of: 1394

           Tape And Reel    enhancement  
FDS6690AS


MOSFET 30V NCH POWER TRENCH SYNCFET
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USD 0.2785

Multiples of: 22

10 A30 V10 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench syncfet
IRLM220ATF


Fairchild Semiconductor MOSFET 200V N-Channel A-FET
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USD 0.2787

Multiples of: 4000

1.13 A200 V800 mOhmsn - channel20 V - 55 C+ 150 C2 Wsmd/smtSOT - 223 - 3Reelsi1 channel20 V enhancement  
FQT1N80TF-WS


Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R
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USD 0.279

Multiples of: 4000

200 mA800 V20 Ohmsn - channel  - 55 C+ 150 C2.1 Wsmd/smtSOT - 223 - 4 si1 channel30 V enhancement  
VEC2315-TL-W


MOSFET PCH+PCH 4V DRIVE SERIES
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USD 0.2793

Multiples of: 1

- 2.5 A , 2.5 A- 60 v , - 60 V194 mOhms , 194 mOhmsp - channel - 2.6 v , - 2.6 V- 55 C+ 150 C900 mWsmd/smtSOT - 28 - 8Reelsi2 channel+/- 20 v , +/- 20 V11 nC , 11 nCenhancement  
FDD10N20LZTM


MOSFET 200V N-Channel MOSFET, UniFET
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USD 0.2794

Multiples of: 2500

7.6 A200 V300 mOhmsn - channel   + 150 C56 Wsmd/smtDPAKReelsi1 channel 12 nC   
PCP1405-TD-H


ON Semiconductor MOSFET NCH 0.6A 250V SOT-89
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USD 0.28

Multiples of: 1598

600 mA250 V5 Ohmsn - channel 400 mV- 55 C+ 150 C3.5 Wsmd/smtSOT - 89 - 3Reelsi1 channel10 V2.1 nCenhancement  
VEC2610-TL-E


Trans MOSFET N/P-CH Si 20V 4.5A/3A 8-Pin Case VEC T/R
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USD 0.2842

Multiples of: 1527

           Tape And Reel    enhancement  
NTTD4401FR2G


Trans MOSFET P-CH 20V 3.3A 8-Pin Micro T/R
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USD 0.2842

Multiples of: 1527

           Tape And Reel    enhancement  
ECH8663R-TL-H


MOSFET PCH+PCH 4V DRIVE SERIES
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USD 0.2852

Multiples of: 3000

8 A30 V20.5 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtECH - 8Cut TapeSi2 Channel12 V    
NVTFS4C05NWFTAG


MOSFET NFET U8FL 30V 102 A 3.6MOH
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USD 0.2863

Multiples of: 1

         smd/smtWDFN - 8Reelsi    aec - q101 
FDC6320C


MOSFET SSOT-6 COMP N-P-CH
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USD 0.287

Multiples of: 1512

220 mA , 120 mA25 V10.6 Ohmsn and p - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel8 V enhancement  
FDMA420NZ


MOSFET 20V 5.7A 30OHM SINGLE NCH 2.5V
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USD 0.2872

Multiples of: 3000

5.7 A20 V30 mOhmsn - channel  - 55 C+ 150 C900 mWsmd/smtMICRO - FETReelsi1 channel12 V enhancement powertrench
FQT13N06LTF


60V 2.8A 2.1W 110mO@10V,1.4A N Channel SOT-223 MOSFETs ROHS
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USD 0.2883

Multiples of: 1

2.8 A60 V110 mOhmsn - channel  - 55 C+ 150 C2.1 Wsmd/smtSOT - 223Reelsi1 channel20 V enhancement  
SSU1N60BTU-WS


MOSFET N-Ch 600V 0.9A 12Ohm
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USD 0.2889

Multiples of: 70

900 mA600 V12 OhmsN - Channel     Through HoleTO - 251 - 3TubeSi1 Channel     
NDD04N60Z-1G


ON Semiconductor MOSFET NFET IPAK 600V 4A 1.8R
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USD 0.29

Multiples of: 1

4.1 A600 V1.8 Ohmsn - channel 4.5 V  83 Wthrough holeIPAK - 3Tubesi1 channel 19 nC   
NDD04N60ZT4G


MOSFET NFET DPAK 600V 4A 1.8R
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USD 0.29

Multiples of: 1

4.1 A600 V1.8 Ohmsn - channel 4.5 V  83 Wsmd/smtDPAKReelsi1 channel 19 nC   
FQT4N25TF


250V 830mA 2.5W 1.75O@415mA,10V null SOT-223 MOSFETs ROHS
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USD 0.2904

Multiples of: 1

   n - channel  - 55 C+ 150 C smd/smtSOT - 223Reel       
NTD4979N-35G


N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
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USD 0.2916

Multiples of: 2175

9 A30 V9 mOhmsn - channel    2.56 Wsmd/smtTO - 252 - 3-si1 channel     
SFT1350-H


ON Semiconductor MOSFET PCH 4.5V DRIVE SERIES
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USD 0.2917

Multiples of: 1

- 19 A- 40 V45 mOhmsp - channel    1 Wthrough holeIPAK - 3Bulksi1 channel     
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