About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SFT1446-TL-H


MOSFET NCH 4V DRIVE SERIES
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ON Semiconductor Availability : 0
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USD 0.3009

Multiples of: 1

20 A60 V51 mOhmsN - Channel  - 55 C+ 150 C23 WSmd/SmtTP - FA - 3ReelSi1 Channel20 V    
FW217A-TL-2WX


ON Semiconductor MOSFET NCHNCH 4.5V DRIVE SERIES
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USD 0.3009

Multiples of: 1

6 A35 V39 mOhmsn - channel     smd/smtSOIC - 8Reelsi2 channel     
NTMFS4C800NT1G


ON Semiconductor MOSFET NFET SO8FL 30V 69A 4MOHM
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USD 0.3024

Multiples of: 3000

     4 V- 55 C+ 150 C smd/smtSO - FL - 8Reelsi1 channel 120 nCenhancement  
NTLUS4C12NTBG


MOSFET COMP UDFN6 30V 10.7A 9MOH
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USD 0.3024

Multiples of: 1

         Smd/SmtTO - 263 - 3Cut TapeSi      
FDS6630A


Transistor: N-MOSFET; unipolar; 30V; 6.5A; 2.5W; SO8
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USD 0.3026

Multiples of: 1392

            powertrench®      
NDS9952A


Fairchild Semiconductor MOSFET SO-8 N&P-CH ENHANCE
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ON Semiconductor Availability : 0
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USD 0.3027

Multiples of: 2500

3.7 A30 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReelsi2 channel20 V enhancement  
NVTFS5124PLTWG


ON Semiconductor MOSFET
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USD 0.303

Multiples of: 5000

- 6 A- 60 V260 mOhmsp - channel     smd/smtWDFN - 8Reelsi1 channel   aec - q101 
VEC2616-TL-W


MOSFET PCH+NCH 4V DRIVE SERIES
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USD 0.303

Multiples of: 1

3 A , - 2.5 A60 v , - 60 V116 mOhms , 194 mOhmsn - channel, p - channel 1.2 v , - 2.6 V- 55 C+ 150 C900 mWsmd/smtSOT - 28 - 8Reelsi2 channel+/- 20 v , +/- 20 V10 nC , 11 nCenhancement  
NDD05N50ZT4G


ON Semiconductor MOSFET NFET IPAK 500V 5A 1.2OHM
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USD 0.303

Multiples of: 1

3 A500 V1.5 Ohmsn - channel30 V - 55 C+ 150 C83 Wsmd/smtDPAK - 3Reelsi 30 V28 nC   
NVMFD5877NLT1G


MOSFET 16-128MHZ3.3VGPEMI
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USD 0.3032

Multiples of: 1500

17 A60 V60 mOhmsn - channel  - 55 C+ 175 C23 Wsmd/smtDFN - 8Reelsi2 channel20 V  aec - q101 
NTD6416ANL-1G


Trans MOSFET N-CH 100V 19A 3-Pin(3+Tab) IPAK Rail
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USD 0.3042

Multiples of: 1

19 A100 V74 mOhmsn - channel  - 55 C+ 175 C71 Wthrough holeDPAK - 3Reel 1 channel20 V    
FDMC8884_F126


Fairchild Semiconductor MOSFET 30V N-CHAN 9A 19mOhm
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USD 0.3052

Multiples of: 1

9 A30 V19 mOhmsn - channel  - 55 C+ 150 C18 Wsmd/smtMLP - 8Reelsi1 channel 5 nC , 10 nC   
FDMA1028NZ_F021


Fairchild Semiconductor MOSFET NCh 80V 171A 3.9mOhm PowerTrench MOSFET
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USD 0.3068

Multiples of: 3000

171 A20 V3.9 mOhmsn - channel     smd/smtMICRO - FET - 6Reelsi2 channel     
ATP101-V-TL-H


P-CHANEL SILICON MOSFET
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USD 0.3069

Multiples of: 1

                   
NTMFS4937NCT3G


N-Channel 30 V 10.2A (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
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USD 0.3069

Multiples of: 5000

17.1 A30 V4 mOhmsn - channel    2.6 Wsmd/smtSO - 8FLReel       
NVD4808NT4G


MOSFET Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK
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USD 0.3071

Multiples of: 1

63 A30 V8 mOhmsn - channel     smd/smtDPAK - 3Reelsi      
FDS6680AS


Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2.5W; SO8
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USD 0.3077

Multiples of: 1

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NVMFS5C673NLWFT1G


MOSFET TRENCH 6 60V NFET
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USD 0.3084

Multiples of: 1

         Smd/SmtSO - FL - 8Cut TapeSi    Aec - Q101 
FQU5P20TU


Fairchild Semiconductor MOSFET 200V P-Channel QFET
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USD 0.3085

Multiples of: 5040

- 3.7 A- 200 V1.4 Ohmsp - channel30 V - 55 C+ 150 C2.5 Wthrough holeIPAK - 3Tubesi1 channel30 V enhancement  
FDMC4435BZ_F126


Fairchild Semiconductor MOSFET -30V P-CH PwrTrench
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USD 0.3097

Multiples of: 3000

- 8.5 A- 30 V20 mOhmsp - channel  - 55 C+ 150 C31 Wsmd/smtMLP - 8Reelsi1 channel     
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