About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMYS1D2N04CLTWG


MOSFET T6 40V LL LFPAK
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USD 2.5125

Multiples of: 1

           Cut Tape       
FCP21N60N


MOSFET 600V, NCH MOSFET
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USD 2.5132

Multiples of: 1

 600 V n - channel     through holeTO - 220 - 3Tubesi      
NDTL03N150CG


MOSFET NCH 2.5A 1500V TO3P3L
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USD 2.5165

Multiples of: 173

2.5 A1.5 kV8 Ohmsn - channel    2.5 Wthrough holeTO - 3P - 3Tubesi  34 nC   
NVBLS0D7N04M8TXG


MOSFET NMOS TOLL 40V 1.2
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USD 2.5345

Multiples of: 1

240 A40 V750 uOhmsN - Channel 2 V- 55 C+ 175 C357 WSmd/SmtMO - 299A - 8Cut TapeSi1 Channel20 V188 nCEnhancementAec - Q101 
NVMFS6H800NLT1G


MOSFET T8 80V LL NFET
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USD 2.543

Multiples of: 1

           Cut Tape       
FDB8443


N-Channel 40 V 25A (Ta), 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263)
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USD 2.5512

Multiples of: 171

25 A40 V2.3 mOhmsn - channel20 V - 55 C+ 175 C188 Wsmd/smtD2PAK - 2Reelsi1 channel20 V enhancement powertrench
NVMFS6H800NWFT1G


MOSFET TRENCH 8 80V NFET
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USD 2.5644

Multiples of: 1

203 A80 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancementAec - Q101 
FDB3632_F085


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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USD 2.5654

Multiples of: 1

80 A100 V7.5 mOhmsn - channel20 V2 v to 4 V- 55 C+ 175 C310 Wsmd/smtD2PAK - 3Reelsi1 channel20 V84 nC  powertrench
FQP50N06


MOSFET TO-220 N-CH 60V 50A
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USD 2.5837

Multiples of: 1

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
FDP047AN08A0_F102


TRANS MOSFET N-CH 75V 15A 3-PIN(3+TAB) TO-220AB TUBE
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USD 2.5999

Multiples of: 800

80 A75 V4.7 mOhmsn - channel  - 55 C+ 175 C310 Wthrough holeTO - 220 - 3Tube 1 channel20 V    
FCH099N60E


MOSFET SuperFET2 600V Slow version
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USD 2.6

Multiples of: 1

37 A600 V87 mOhmsn - channel 3.5 V- 55 C+ 150 C357 Wthrough holeTO - 247 - 3Bulksi 30 V114 nCenhancement superfet ii
BBS3002-TL-1E


MOSFET P-CH Pwr MOSFET 60V 100A 5.8mOhm
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USD 2.6077

Multiples of: 800

- 100 A- 60 V5.8 mOhmsp - channel   + 150 C90 Wthrough holeTO - 263 - 2Reelsi1 channel4 V280 nCenhancement  
FCH22N60N


MOSFET SUPREMOS 22A-TO247
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USD 2.6077

Multiples of: 450

   n - channel   + 150 C through holeTO - 247Tube       
2SK4125-1E


Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-3P Magazine
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USD 2.6209

Multiples of: 240

17 A600 V610 mOhmsn - channel      TO - 3P - 3Tube 1 channel     
FQA65N20


MOSFET 200V N-Channel QFET
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USD 2.6244

Multiples of: 125

65 A200 V32 mOhmsn - channel  - 55 C+ 150 C310 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement qfet
FDMD8540L


Trans MOSFET N-CH 40V 33A 8-Pin PQFN EP T/R
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USD 2.6402

Multiples of: 1

33 A40 V2.2 mOhms , 2.2 mOhmsn - channel 1 V- 55 C+ 150 C2.3 Wsmd/smtPOWER - 56 - 8Cut Tapesi2 channel20 V81 nC , 81 nCenhancement  
FDMD8560L


MOSFET 60V Dual N-Channel PowerTrench MOSFET
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USD 2.6403

Multiples of: 1

22 A , 22 A60 v , 60 V5.4 mOhms , 5.4 mOhmsn - channel 1 v , 1 V- 55 C+ 150 C2.2 Wsmd/smtPOWER56 - 8Reelsi2 channel+/- 20 v , +/- 20 V92 nC , 92 nCenhancement  
NVMTS0D4N04CTXG


MOSFET AFSM T6 40V SG NCH
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USD 2.6569

Multiples of: 3000

 40 V N - Channel     Smd/SmtDFNW - 8Cut Tape     Aec - Q101 
FQAF16N50


Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
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USD 2.6589

Multiples of: 360

            qfet®      
FQA140N10


MOSFET 100V N-Channel QFET
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USD 2.6596

Multiples of: 1

140 A100 V10 mOhmsn - channel  - 55 C+ 175 C375 Wthrough holeTO - 3PNTubesi1 channel25 V enhancement qfet
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