ATF-33143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description Features
Avagos ATF-33143 is a high dynamic range, low noise
Lead-free Option Available
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
Low Noise Figure
plastic package.
Excellent Uniformity in Product Specifi cations
Based on its featured performance, ATF-33143 is ideal for
1600 micron Gate Width
the fi rst or second stage of base station LNA due to the
Low Cost Surface Mount Small Plastic Package
excellent combination of low noise fi gure and enhanced
SOT-343 (4 lead SC-70)
[1]
linearity . The device is also suitable for applications in
Wireless LAN, WLL/RLL, MMDS, and other systems requiring
Tape-and-Reel Packaging Option Available
super low noise fi gure with good intercept in the 450 MHz
to 10 GHz frequency range.
Specifi cations
1.9 GHz; 4V, 80 mA (Typ.)
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-
0.5 dB Noise Figure
34143 may also be considered for the higher gain performance,
particularly in the higher frequency band (1.8 GHz and up).
15 dB Associated Gain
22 dBm Output Power at 1 dB Gain Compression
Surface Mount Package SOT-343
rd
33.5 dBm Output 3 Order Intercept
Applications
Tower Mounted Amplifi er, Low Noise Amplifi er and
Driver Amplifi er for GSM/TDMA/CDMA Base Stations
LNA for Wireless LAN, WLL/RLL and MMDS
Pin Connections and Package Marking
Applications
General Purpose Discrete PHEMT for other Ultra Low
DRAIN SOURCE
Noise Applications
SOURCE GATE
Attention: Observe precautions for
handling electrostatic sensitive devices.
Note:
ESD Machine Model (Class A)
Top View. Package marking provides
ESD Human Body Model (Class 0)
orientation and identifi cation.
Refer to Avago Application Note A004R:
3P = Device code
Electrostatic Discharge Damage and Control.
x = Date code character. A new character
is assigned for each month, year.
3Px[1]
ATF-33143 Absolute Maximum Ratings
Notes:
Absolute
1. Operation of this device above any one of
Symbol Parameter Units Maximum
these parameters may cause permanent
damage.
[2]
V Drain - Source Voltage V 5.5
DS
2. Assumes DC quiesent conditions.
[2]
V Gate - Source Voltage V -5
3. V = 0 V
GS
GS
[2] 4. Source lead temperature is 25C. Derate
V Gate Drain Voltage V -5
GD
6 mW/C for T > 60C.
L
[2] [3]
I Drain Current mA I
DS dss 5. Please refer to failure rates in reliability
[4]
section to assess the reliability impact
P Total Power Dissipation mW 600
diss
of running devices above a channel
P RF Input Power dBm 20
in max
temperature of 140C.
[5]
6. Thermal resistance measured using 150C
T Channel Temperature C 160
CH
Liquid Crystal Measurement method.
T Storage Temperature C -65 to 160
STG
[6]
Thermal Resistance C/W 145
jc
[8, 9]
Product Consistency Distribution Charts
500 120
Cpk = 1.7
+0.6 V
Std = 0.05
100
400
80
300
0 V
-3 Std +3 Std
60
200
40
100
0.6 V
20
0
0
02 4 6 8 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V (V)
DS NF (dB)
[7]
Figure 1. Typical Pulsed I-V Curves . (V = -0.2 V per step)
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
GS
LSL=0.2, Nominal=0.53, USL=0.8
100 120
Cpk = 1.21 Cpk = 2.3
Std = 0.94 Std = 0.2
100
80
80
60
-3 Std +3 Std
-3 Std +3 Std
60
40
40
20
20
0
0
29 31 33 35 37
13 14 15 16 17
OIP3 (dBm)
GAIN (dB)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, V may swing positive and the drain current may exceed I . These conditions are acceptable as long as the maximum
GS dss
P and P ratings are not exceeded.
diss in max
8. Distribution data sample size is 450 samples taken from 9 diff erent wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test requirements. Circuit losses have been de-embedded from actual measurements.
10. The probability of a parameter being between 1 is 68.3%, between 2 is 95.4% and between 3 is 99.7%.
2
I (mA)
DS