NX138AKSX Nexperia

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 170 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 170 mA T = 25 C - 3 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm .Nexperia NX138AKS 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138AKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX138AKS F8% 1 % = placeholder for manufacturing site code NX138AKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 June 2016 2 / 16