PESD9X7.0L,315 NXP

PESD9X5.0L; PESD9X7.0L Unidirectional ESD protection diodes Rev. 1 16 December 2010 Product data sheet 1. Product profile 1.1 General description Single unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features and benefits ESD protection of one line ESD protection up to 30 kV Max. peak pulse power: P =150 W IEC 61000-4-2; level 4 (ESD) PP Low clamping voltage: V =10V IEC 61000-4-5 (surge); I =10A CL PP Ultra low leakage current: I =3nA Ultra small SMD plastic package RM AEC-Q101 qualified 1.3 Applications Computers and peripherals Portable electronics Audio and video equipment Communication systems Cellular handsets and accessories 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage RWM PESD9X5.0L - - 5.0 V PESD9X7.0L - - 7.0 V C diode capacitance f = 1 MHz; V =0V d R PESD9X5.0L - 68 100 pF PESD9X7.0L - 62 100 pFPESD9X5.0L; PESD9X7.0L NXP Semiconductors Unidirectional ESD protection diodes 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol [1] 1 cathode 2 anode 2 1 1 2 006aaa152 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD9X5.0L - leadless ultra small plastic package; 2 terminals; SOD882 body 1.0 0.6 0.5 mm PESD9X7.0L 4. Marking Table 4. Marking codes Type number Marking code PESD9X5.0L AS PESD9X7.0L AT 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit [1][2] P peak pulse power t =8/20 s -150 W PP p [1][2] I peak pulse current t =8/20 s -10 A PP p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to pin 2. PESD9XXL_SER All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 16 December 2010 2 of 14