FDMS007N08LC N-Channel Shielded Gate POWERTRENCH MOSFET 80 V, 84 A, 6.7 m Description www.onsemi.com This N Channel MV MOSFET is produced using ONSemiconductors advanced POWERTRENCH process that V r MAX I incorporates Shielded Gate technology. This process has been DS DS(on) D MAX optimized to minimize onstate resistance and yet maintain superior 80 V 84 A 6.7 m 10 V switching performance with best in class soft body diode. Features NChannel Shielded Gate MOSFET Technology Max r = 6.7 m at V = 10 V, I = 21 A DS(on) GS D D 5 4 G Max r = 9.9 m at V = 4.5 V, I = 17 A DS(on) GS D D 6 3 S 50% Lower Q than Other MOSFET Suppliers rr Lowers Switching Noise/EMI D 7 2 S MSL1 Robust Package Design D 8 1 S 100% UIL Tested These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D D D D Typical Applications Primary DCDC MOSFET G S Synchronous Rectifier in DCDC and ACDC S S Pin 1 Motor Drive Top Bottom Solar PQFN8 5 6, 1.27P (Power 56) CASE 483AE MARKING DIAGRAM Y&Z&3&K FDMS 007N08LC Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDMS007N08LC = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2018 Rev. 1 FDMS007N08LC/DFDMS007N08LC MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A Symbol Parameter Ratings Unit V V Drain to Source Voltage 80 DS V V Gate to Source Voltage 20 GS A I 84 Drain Current Continuous T = 25C (Note 5) D C Continuous T = 100C (Note 5) 53 C Continuous T = 25C (Note 1a) 14 A Pulsed (Note 4) 345 mJ E 181.5 Single Pulse Avalanche Energy (Note 3) AS W P Power Dissipation T = 25C 92.6 D C Power Dissipation T = 25C (Note 1a) 2.5 A C T , T 55 to +150 Operating and Storage Junction Temperature Range J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit C/W 1.35 R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping (Qty / Packing) FDMS007N08LC FDMS007N08LC PQFN8 56 13 12 mm 3000 / Tape & Reel (Power 56) (PbFree/Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 80 V DSS D GS Breakdown Voltage I = 250 A, referenced to 25C 32 mV/C BV D DSS Temperature Coefficient T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 A GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage 1.0 1.4 2.5 V V = V , I = 120 A GS(th) GS DS D Gate to Source Threshold Voltage I = 120 A, referenced to 25C 5.6 mV/C V D GS(th) Temperature Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 21 A 4.9 6.7 m DS(on) GS D V = 4.5 V, I = 17 A 6.7 9.9 GS D V = 10 V, I = 21 A, T = 125C 8.5 11.6 GS D J g Forward Transconductance V = 5 V, I = 21 A 84 S FS DD D www.onsemi.com 2