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It is silicon nitride passivated ion-implanted epitaxial 600 V Reverse Voltage and High Reliability planar construction. This device is intended for use as freewheel- ing of boost diode in switching power supplies and other power Improved dv/dt Capability swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power RoHS compliant switching circuits reducing power loss in the switching transistors. Applications General Purpose SMPS, Power Switching Circuits Boost Diode in Continuous Mode Power Factor Corrections TO-220-2L 1. Cathode 2. Anode 1. Cathode 2. Anode o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FFP15S60S Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current T = 123 C 15 A F(AV) C Non-repetitive Peak Surge Current I 150 A FSM 60Hz Single Half-Sine Wave o T , T Operating and Storage Temperature Range -65 to +175 C J STG Thermal Characteristics Symbol Parameter FFP15S60S Unit o R Maximum Thermal Resistance, Junction to Case 1.3 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFP15S60STU F15S60S TO-220-2L Tube N/A N/A 50 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFP15S60S Rev. 1.8