SP8J3 Transistors 4V Drive Pch+Pch MOS FET SP8J3 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 ( ) ( ) 8 5 z Features 1) Low On-resistance. (100m at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. ( ) ( ) 1 4 4) Low voltage drive. (4V) 0.2 1.27 1pin mark Each lead has same dimensions z Applications Power switching, DC-DC converter z Packaging specifications z Inner circuit (8) (7) (6) (5) Package Taping Type Code TB 2500 Basic ordering unit (pieces) 2 2 SP8J3 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 3.5 A Drain current 1 Pulsed I 14 A DP Source current Continuous IS 1.6 A 1 (Body diode) Pulsed ISP 14 A 2 Total power dissipation PD 2.0 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 62.5 C / W Mounted on a ceramic board. Rev.A 1/4 3.9 6.0 0.4Min.SP8J3 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage V 1.0 2.5 V V = 10V, I = 1mA GS (th) DS D 65 90 m ID= 3.5A, VGS= 10V Static drain-source on-state RDS (on) 100 140 m ID= 1.75A, VGS= 4.5V resistance 120 165 m I = 1.75A, V = 4.0V D GS Forward transfer admittance Yfs 1.8 SVDS= 10V, ID= 1.75A Input capacitance Ciss 490 pF VDS= 10V Output capacitance Coss 110 pF VGS=0V Reverse transfer capacitance C 75 pF f=1MHz rss Turn-on delay time td (on) 10 ns ID= 1.75A VDD 15V Rise time tr 15 ns VGS= 10V Turn-off delay time t 35 ns d (off) RL=8.6 Fall time tf 10 ns RG=10 Total gate charge Qg 5.5 nC VDD 15V Gate-source charge Qgs 1.5 nC VGS= 5V Gate-drain charge Q 2.0 nC I = 3.5A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.6A, V =0V S GS Rev.A 2/4