X-On Electronics has gained recognition as a prominent supplier of SP8J3FU6TB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8J3FU6TB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8J3FU6TB ROHM

SP8J3FU6TB electronic component of ROHM
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Part No.SP8J3FU6TB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 30V 3.5A P-CHAN DUAL
Datasheet: SP8J3FU6TB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9817 ea
Line Total: USD 1.98 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9817
10 : USD 1.5315
100 : USD 1.1712
500 : USD 0.9607
1000 : USD 0.7812
5000 : USD 0.7434

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Drain Current Id P Channel
Drain Source Voltage Vds P Channel
On Resistance Rdson P Channel
Pulse Current Idm
Termination Type
Voltage Vds Typ
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
Voltage Vgs Th Min
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We are delighted to provide the SP8J3FU6TB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8J3FU6TB and other electronic components in the MOSFETs category and beyond.

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SP8J3 Transistors 4V Drive Pch+Pch MOS FET SP8J3 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET SOP8 5.0 1.75 0.4 ( ) ( ) 8 5 z Features 1) Low On-resistance. (100m at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. ( ) ( ) 1 4 4) Low voltage drive. (4V) 0.2 1.27 1pin mark Each lead has same dimensions z Applications Power switching, DC-DC converter z Packaging specifications z Inner circuit (8) (7) (6) (5) Package Taping Type Code TB 2500 Basic ordering unit (pieces) 2 2 SP8J3 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 3.5 A Drain current 1 Pulsed I 14 A DP Source current Continuous IS 1.6 A 1 (Body diode) Pulsed ISP 14 A 2 Total power dissipation PD 2.0 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 62.5 C / W Mounted on a ceramic board. Rev.A 1/4 3.9 6.0 0.4Min.SP8J3 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage V 1.0 2.5 V V = 10V, I = 1mA GS (th) DS D 65 90 m ID= 3.5A, VGS= 10V Static drain-source on-state RDS (on) 100 140 m ID= 1.75A, VGS= 4.5V resistance 120 165 m I = 1.75A, V = 4.0V D GS Forward transfer admittance Yfs 1.8 SVDS= 10V, ID= 1.75A Input capacitance Ciss 490 pF VDS= 10V Output capacitance Coss 110 pF VGS=0V Reverse transfer capacitance C 75 pF f=1MHz rss Turn-on delay time td (on) 10 ns ID= 1.75A VDD 15V Rise time tr 15 ns VGS= 10V Turn-off delay time t 35 ns d (off) RL=8.6 Fall time tf 10 ns RG=10 Total gate charge Qg 5.5 nC VDD 15V Gate-source charge Qgs 1.5 nC VGS= 5V Gate-drain charge Q 2.0 nC I = 3.5A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.6A, V =0V S GS Rev.A 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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