TLP202G TOSHIBA Photocoupler Photorelay TLP202G PC Card Modems Unit: mm PBX STB (Set Top Boxes) Measurement Equipment The Toshiba TLP202G consists of an infrared emitting diode optically coupled to a photo-MOSFET in an 8-pin SOP package. This photorelay has a characteristic of high-withstanding voltage between output pins which enables TLP202G to be applied in hook relays and dial-pulse for modems and facsimiles. Moreover, the TLP202G is used for PCMCIA-compliant card modems because the maximum mounted height of SOP package is as small as 2.1 mm. 8-pin SOP (2.54SOP8): Height = 2.1 mm, Pitch = 2.54 mm Normally open (1-form-A) device JEDEC Peak Off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) JEITA On-state current: 110 mA (max) TOSHIBA 11-10H1 On-state resistance: 35 (max, t < 1 s) Weight: 0.2 g (typ.) On-state resistance: 50 (max, continuous) Isolation voltage: 1500 Vrms (min) UL-recognized: UL 1577, File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) 1 8 2 7 1, 3 : Anode 2, 4 : Cathode 3 6 5 : Drain D1 6 : Drain D2 7 : Drain D3 4 5 8 : Drain D4 Start of commercial production 2001-12 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP202G Absolute Maximum Rating (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Reverse voltage V 5 V R LED P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF On-state current I 110 mA ON Forward current derating (Ta 25C) I /C 1.1 mA/C ON Detector Output power dissipation P 375 mW O Output power dissipation derating (Ta 25C) P / C 3.75 mW / C O Junction temperature T 125 C j 55 to Storage temperature range T C stg 125 Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 10 25 mA F On-state current I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 10 mA 1.0 1.15 1.3 V F F LED Reverse current I V = 5 V 10 A R R Capacitance C VF = 0 V, f = 1 MHz 30 pF T Off-state current I V = 350 V 1 A OFF OFF Detector Capacitance C V = 0 V, f = 1 MHz 30 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation