CGH25120F
120 W, 2.3-2.7 MHz, GaN HEMT
for WiMAX and LTE
Description
Crees CGH25120F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities, which makes the CGH25120F
ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Type: 440162
PN: CGH25120F
Typical Performance Over 2.3-2.7GHz (T = 25C) of Demonstration Amplifier
C
Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units
Gain @ 43 dBm 12.5 12.8 13.1 13.5 13.6 dB
ACLR @ 43 dBm -32.7 -34.0 -32.5 -29.5 -25.8 dBc
Drain Efficiency @ 43 dBm 26.5 28.0 30.0 32.5 34.5 %
Note: Measured in the CGH25120F-AMP amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Features
2.3 - 2.7 GHz Operation
13 dB Gain
-32 dBc ACLR at 20 W P
AVE
30% Efficiency at 20 W P
AVE
High Degree of DPD Correction Can be Applied
Large Signal Models Available for ADS and MWO
Rev 3.2 - March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.comCGH25120F 2
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 120 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Power Dissipation P 56 Watts
DISS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 30 mA 25C
GMAX
1
Maximum Drain Current I 12 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 40 in-oz
3
Thermal Resistance, Junction to Case R 1.5 C/W 85C
JC
3
Case Operating Temperature T -40, +150 C
C
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library
3
Measured for the CGH25120F at P = 56 W.
DISS
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 28 V, I = 0.5 mA
GS(Q) DC DS D
2
Saturated Drain Current I 23.2 28.0 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 28.8 mA
BR DC GS D
RF Characteristics (T = 25C, F = 2.15 GHz unless otherwise noted)
C 0
3,4,5
Saturated Output Power P 130 W V = 28 V, I = 0.5 A,
SAT DD DQ
3,5
Pulsed Drain Efficiency 60 % V = 28 V, I = 0.5 A, P = P
DD DQ OUT SAT
6
Modulated Gain G 10.5 12.5 dB V = 28 V, I = 0.5 A, P = 43 dBm
DD DQ OUT
6,7
WCDMA Linearity ACLR -31 -27 dBc V = 28 V, I = 0.5 A, P = 43 dBm
DD DQ OUT
6
Modulated Drain Efficiency 27 32 % V = 28 V, I = 0.5 A, P = 43 dBm
DD DQ OUT
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y
V = 28 V, I = 1.0 A, P = 20 W CW
DD DQ OUT
Dynamic Characteristics
8
Input Capacitance C 88 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
8
Output Capacitance C 12 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1 6
Measured on wafer prior to packaging. Equivalent 802.16e WiMAX signal, 10 MHz Bandwidth, PAR = 9.6 dB @
2
Scaled from PCM data. 0.01% Probability on CCDF.
3 7
Pulse Width = 40 S, Duty Cycle = 5%. Measured over 10 MHz bandwidth at 10 MHz offset from carrier edge.
4 8
P is defined as I = 10 mA peak. Includes package and internal matching components.
SAT G
5
Measured in CGH25120F-AMP
Rev 3.2 - March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com