X-On Electronics has gained recognition as a prominent supplier of CMPA801B030F RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CMPA801B030F RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CMPA801B030F Wolfspeed

CMPA801B030F electronic component of Wolfspeed
CMPA801B030F Wolfspeed
CMPA801B030F RF JFET Transistors
CMPA801B030F  Semiconductors

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Part No. CMPA801B030F
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors 30W GaN MMIC Power Amplifier 28V 8.0-11.0GHz Flange
Datasheet: CMPA801B030F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 594.3858
10 : USD 589.7994
25 : USD 585.1903
50 : USD 571.5336
100 : USD 571.5222
250 : USD 571.5108
2500 : USD 571.4994
N/A

Obsolete
   
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Product Category
Category
Factory Pack Quantity :
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We are delighted to provide the CMPA801B030F from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPA801B030F and other electronic components in the RF JFET Transistors category and beyond.

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CMPA801B030F 30 W, 8.0 11.0 GHz, GaN MMIC, Power Amplifiers Description Wolfspeeds CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si PN : CMPA801B030F and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic Package Type : 440213 flanged package for optimal electrical and thermal performance. Features Applications 8.0 - 11.0 GHz Operation Marine Radar 37 W P typical Communications OUT 16 dB Power gain Satellite Communication Uplink 36% Typical PAE 50 Ohm internally matched Typical Performance Over 8.0 - 11.0 GHz (T = 85C) C Parameter 8.0 GHz 8.5 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain 27 25 22 23 21 dB 1 Output Power 31 30 28 25 24 W 1 Power Gain 17 17 17 16 16 dB 1 Power Added Efficiency 39 39 36 28 33 % Note: 1. Measured in CMPA801B030F-AMP under P = 28 dBm, 100 s pulse width, 10% duty. IN Rev. 07, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.comCMPA801B030F 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Power Dissipation P 77 W DISS Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 13 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 1.22 C/W Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W JC DISS Thermal Resistance, Junction to Case R 1.80 C/W CW, P = 55 W, 85C JC DISS Case Operating Temperature T -40, +130 C Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W C DISS Case Operating Temperature T -40, +90 C CW, P = 55 W C DISS Note: 1 Refer to the Application Note on soldering at www.wolfspeed.com/RF/Document-Library Electrical Characteristics (Frequency = 8.0 GHz - 11.0 GHz unless otherwise stated; T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold V -3.8 -3.0 -2.3 V V = 10 V, I = 13 mA GS(TH) DS D Gate Quiscent Voltage V -2.7 V V = 28 V, I = 800 mA GS(Q) DS D 2 Saturated Drain Current I 9.5 13.2 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown V 84 V V = -8 V, I = 13 mA BD GS D Voltage 3 RF Characteristics Small Signal Gain S21 23 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz DD DQ Input Return Loss S11 -3.7 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz DD DQ Output Return Loss S22 -3.6 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz DD DQ No damage at all phase angles, V = 28 V, I DD DQ Output Mismatch Stress VSWR 5:1 Y = 800 mA, Pulse Width = 100 s, Duty Cycle = 10%, P = 30 W OUT Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA801B030F-AMP. Rev. 07, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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