CMPA801B030F
30 W, 8.0 11.0 GHz, GaN MMIC, Power Amplifiers
Description
Wolfspeeds CMPA801B030F is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to Si
PN : CMPA801B030F
and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic
Package Type : 440213
flanged package for optimal electrical and thermal performance.
Features Applications
8.0 - 11.0 GHz Operation Marine Radar
37 W P typical Communications
OUT
16 dB Power gain Satellite Communication Uplink
36% Typical PAE
50 Ohm internally matched
Typical Performance Over 8.0 - 11.0 GHz (T = 85C)
C
Parameter 8.0 GHz 8.5 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units
Small Signal Gain 27 25 22 23 21 dB
1
Output Power 31 30 28 25 24 W
1
Power Gain 17 17 17 16 16 dB
1
Power Added Efficiency 39 39 36 28 33 %
Note:
1. Measured in CMPA801B030F-AMP under P = 28 dBm, 100 s pulse width, 10% duty.
IN
Rev. 07, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.comCMPA801B030F 2
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Drain-source Voltage V 84 V 25C
DSS DC
Gate-source Voltage V -10, +2 V 25C
GS DC
Power Dissipation P 77 W
DISS
Storage Temperature T -55, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 13 mA 25C
GMAX
1
Soldering Temperature T 245 C
S
Screw Torque 40 in-oz
Thermal Resistance, Junction to Case R 1.22 C/W Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W
JC DISS
Thermal Resistance, Junction to Case R 1.80 C/W CW, P = 55 W, 85C
JC DISS
Case Operating Temperature T -40, +130 C Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W
C DISS
Case Operating Temperature T -40, +90 C CW, P = 55 W
C DISS
Note:
1
Refer to the Application Note on soldering at www.wolfspeed.com/RF/Document-Library
Electrical Characteristics (Frequency = 8.0 GHz - 11.0 GHz unless otherwise stated; T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold V -3.8 -3.0 -2.3 V V = 10 V, I = 13 mA
GS(TH) DS D
Gate Quiscent Voltage V -2.7 V V = 28 V, I = 800 mA
GS(Q) DS D
2
Saturated Drain Current I 9.5 13.2 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown
V 84 V V = -8 V, I = 13 mA
BD GS D
Voltage
3
RF Characteristics
Small Signal Gain S21 23 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz
DD DQ
Input Return Loss S11 -3.7 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz
DD DQ
Output Return Loss S22 -3.6 dB V = 28 V, I = 800 mA, Frequency = 8-11 GHz
DD DQ
No damage at all phase angles, V = 28 V, I
DD DQ
Output Mismatch Stress VSWR 5:1 Y = 800 mA, Pulse Width = 100 s, Duty Cycle =
10%, P = 30 W
OUT
Notes:
1
Measured on-wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in the CMPA801B030F-AMP.
Rev. 07, March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com