About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH20N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 0
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USD 3.7135

Multiples of: 1

Single1200 V4 V30 V40 A100 nA  TO - 247AD - 3TubeSiThrough Hole278 W- 55 C+ 175 CIxyh20n120
IXGH100N30C3


IGBT Transistors 100 Amps 300V
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IXYS Availability : 0
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USD 3.7426

Multiples of: 1

Single300 V1.53 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole460 W- 55 C+ 150 CIxgh100n30
IRGP35B60PDPBF


Transistor: IGBT; 600V; 40A; 308W; TO247-3
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Infineon Availability : 0
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USD 3.7574

Multiples of: 1

      308 W         
IGW30N100T


Infineon Technologies IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
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USD 3.768

Multiples of: 1

Single1000 V1.8 V20 V60 A600 nA  TO - 247 - 3TubeSiThrough Hole412 W- 55 C+ 175 CIgw30n100
IRG4PC60FPBF


Transistor: IGBT; 600V; 90A; 520W; TO247-3
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USD 3.7734

Multiples of: 25

Single600 V1.8 V+/- 20 V90 A 520 W TO - 247TubeSiThrough Hole520 W- 55 C  
STGW15S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 3.78

Multiples of: 1

Single1.2 kV1.55 V+/- 20 V30 A250 nA  TO 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
FGH30S150P


IGBT Transistors 1500V 30A FS SA Trench IGBT
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ON Semiconductor Availability : 0
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USD 3.7903

Multiples of: 1

Single1.5 kV2.15 V+/- 25 V60 A+/- 500 nA  TO - 247 - 3BulkSiThrough Hole500 W- 55 C+ 175 CFgh30s150p
IXXH60N65C4


IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
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IXYS Availability : 0
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USD 3.7933

Multiples of: 1

Single650 V1.8 V20 V118 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh60n65
NGTB40N120L3WG


IGBT Transistors IGBT 1200V 40A FS3 LOW
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ON Semiconductor Availability : 0
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USD 3.8007

Multiples of: 1

Single1.2 kV1.55 V+/- 20 V160 A200 nA  TO 247 - 3TubeSiThrough Hole454 W- 55 C+ 175 C 
STGW40NC60V


Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
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STMicroelectronics Availability : 0
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USD 3.8038

Multiples of: 1

Single        Rail/Tube      
AFGHL40T65SQD


IGBT Transistors 650V40A FS4 IGBT TO-247LL
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ON Semiconductor Availability : 0
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USD 3.8111

Multiples of: 1

                
HGTG18N120BND


IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
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ON Semiconductor Availability : 0
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USD 3.8115

Multiples of: 1

                
IRGP4630D-EPBF


IGBT Transistors G6, 600V, 30A, COPAK-247AD
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Infineon Availability : 0
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USD 3.8254

Multiples of: 1

         Tube      
IRGP4078DPBF


International Rectifier IGBT Transistors 600V IGBT w Ultra-Low VF
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Infineon Availability : 0
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USD 3.8284

Multiples of: 1

Single600 V1.9 V20 V74 A100 nA  TO - 247AC - 3TubeSiThrough Hole278 W- 55 C+ 175 C 
IRG7PH42UPBF


Transistor: IGBT; 1200V; 90A; 385W; TO247-3
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USD 3.8321

Multiples of: 1

Single1.2 kV2 V+/- 30 V90 A 385 W TO - 247TubeSiThrough Hole385 W- 55 C  
NGTB40N120FL2WAG


IGBT Transistors 1200V/40 FAST IGBT FSII T
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ON Semiconductor Availability : 0
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USD 3.8399

Multiples of: 1

Single1200 V 30 V160 A200 nA  TO - 247 - 4TubeSiThrough Hole268 W- 55 C+ 175 C 
IHW30N160R2FKSA1


Infineon Technologies IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
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USD 3.8448

Multiples of: 1

Single1600 V1.8 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole312 W- 40 C+ 175 CXhw30n160
IRG8P15N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 3.8527

Multiples of: 1

Single1200 V1.7 V30 V30 A100 nA125 W TO - 247AC - 3TubeSiThrough Hole125 W- 40 C+ 150 C 
STGWA40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics Availability : 0
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USD 3.8587

Multiples of: 1

Single650 V1.6 V20 V80 A250 nA  TO - 247 - 3 SiThrough Hole283 W- 55 C+ 175 CStgwa40h65fb
IKW40T120XK


IGBT Transistors LOW LOSS DuoPack 1200V 40A
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USD 3.862

Multiples of: 1

Single1200 V1.7 V+/- 20 V75 A600 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 150 CTrenchstop
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