About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NTE3320


Transistor: IGBT; 600V; 50A; 240W; TO3P
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE Availability : 4
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USD 20.4525
Multiples of: 1

      240 W         
SGM150HF12A3TFD


- IGBTs ROHS
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Silan Availability : 4
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USD 49.2896
Multiples of: 1

                
IFF300B17N2E4PB11BPSA1


IGBT Transistors LOW POWER ECONO
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Infineon Availability : 4
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USD 316.303
Multiples of: 1

         Tray      
IRGR3B60KD2TRLP


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 3
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USD 0.9116
Multiples of: 1

Single600 V1.9 V+/- 20 V7.8 A100 nA  TO - 252AA - 3Cut TapeSiSmd/Smt52 W- 55 C+ 150 CRc
FGPF10N60UNDF


IGBT Transistors 600V, 10A Short Circuit Rated IGBT
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ON Semiconductor Availability : 3
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USD 1.0075
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 600 V2 V 20 A 17 W TO - 220FTubeSiThrough Hole17 W  Fgpf10n60undf
Hot IHW20N120R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon Availability : 3
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USD 1.2998
Multiples of: 1

Single1200 V1.55 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole288 W- 40 C+ 175 CRc
NGTB30N65IHL2WG


IGBT Transistors 650V/30A FAST IGBT FSII T
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ON Semiconductor Availability : 3
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USD 3.312
Multiples of: 1

Single650 V1.6 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
NCE40TD120VTP


TO-247P IGBTs ROHS
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NCE Power Availability : 3
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USD 3.3298
Multiples of: 1

                
SPT40N120T1B


416W 40A 1.2kV Trench Field Stop TO-247-3 IGBTs ROHS
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SPTECH Availability : 3
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USD 3.4702
Multiples of: 1

                
SL50T120FZ


TO-264 IGBTs ROHS
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SLKORMICRO Availability : 3
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USD 3.5049
Multiples of: 1

                
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