About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4066PBF


IGBT Transistors 600V Low VCEon Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 1
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USD 6.55

Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247TubeSiThrough Hole454 W- 55 C  
IXGH48N60C3D1


IGBT Transistors 30 Amps 600V
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IXYS Availability : 1
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USD 7.5111

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Single600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh48n60
IXXH110N65C4


IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
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IXYS Availability : 1
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USD 8.4232

Multiples of: 1

Single650 V1.98 V20 V234 A100 nA  TO - 247AD - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxh110n65
FGH60N60SMD-F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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ON Semiconductor Availability : 1
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USD 9.1646

Multiples of: 1

Single600 V2.14 V+/- 20 V120 A400 nA  TO - 247 - 3 SiThrough Hole600 W- 55 C+ 175 CFgh60n60sm_F085
IXyH100N65C3


Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
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IXYS Availability : 1
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by Thu. 18 Jul
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USD 12.205

Multiples of: 1

      830 W   Genx3, Planar, Xpt     
SGM40HF12A1TFD


611ns -40℃~+150℃@(Tj) 425ns 40A 1.2kV IGBT模块 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V 2.6V@40A 80A - IGBTs ROHS
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Silan Availability : 1
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USD 12.8832

Multiples of: 1

                
APT40GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 1
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USD 15.925

Multiples of: 1

          Si     
LEGM25BE120E2H


- IGBTs ROHS
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Leading Energy Availability : 1
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USD 16.9487

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KWRFF100R12SWM


IGBTs ROHS
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JUNSHINE Availability : 1
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USD 23.303

Multiples of: 1

                
IXBH24N170


IGBT Transistors BIMOSFETS 1700V 60A
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IXYS Availability : 1
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USD 26.195

Multiples of: 1

Single       TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh24n170
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