About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG7PH42UD1-EP


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 5.7024

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 1.2 kV2 V 85 A   TO - 247 - 3TubeSiThrough Hole313 W   
IXYA30N120A4HV


IGBT Transistors IGBT XPT-GENX4
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IXYS Availability : 0
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USD 5.7166

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         Tube      
RJH60D7BDPQ-E0#T2


IGBT Transistors IGBT
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Renesas Availability : 0
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USD 5.7231

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         TubeSi     
IKZA40N65RH5XKSA1


IGBT Trench Field Stop 650V 74A 250W Through Hole PG-TO247-4-3
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Infineon Availability : 0
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USD 5.7251

Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
IXA45IF1200HB


IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
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IXYS Availability : 0
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USD 5.7297

Multiples of: 1

Single1200 V1.8 V20 V78 A500 nA  TO - 247 - 3TubeSiThrough Hole325 W- 55 C+ 150 CIxa45if1200hb
IRGP4760D-EPBF


IGBT Transistors IGBT DISCRETES
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Infineon Availability : 0
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USD 5.748

Multiples of: 1

Single650 V1.7 V+/- 20 V90 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
AFGY100T65SPD


IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3
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ON Semiconductor Availability : 0
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USD 5.7633

Multiples of: 450

        TO - 247 - 3Tube     Automotive, Aec - Q101
IKW50N65H5AXKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 5.7672

Multiples of: 1

Single650 V1.66 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 H5
APT70GR65B2DU40


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 5.7711

Multiples of: 1

         TubeSi     
APT45GR65BSCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 5.778

Multiples of: 1

         TubeSi     
IKFW75N60ETXKSA1


IGBT Transistors Infineons 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
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Infineon Availability : 0
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USD 5.8395

Multiples of: 1

Single600 V1.5 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IXYH24N90C3


IGBT Transistors GenX3 900V XPT IGBTs
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IXYS Availability : 0
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USD 5.8581

Multiples of: 1

Single900 V2.3 V30 V46 A100 nA  TO - 247AD - 3TubeSiThrough Hole240 W- 55 C+ 175 CIxyh24n90
IRG4PSH71UDPBF


Transistor: IGBT; 1200V; 99A; 350W; SUPER247
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USD 5.865

Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
IXYP30N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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IXYS Availability : 0
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USD 5.8901

Multiples of: 1

Single1200 V3.7 V30 V75 A100 nA  TO - 220 - 3TubeSiThrough Hole500 W- 55 C+ 175 CIxyp30n120
AIKW50N65DF5XKSA1


IGBT Transistors DISCRETES
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Infineon Availability : 0
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USD 5.8901

Multiples of: 1

         TubeSi    Trenchstop 5 F5
IRGPS40B120UPBF


IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT
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Infineon Availability : 0
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USD 5.9109

Multiples of: 1

Single1.2 kV3.5 V+/- 20 V80 A 595 W TO - 274AATubeSiThrough Hole595 W- 55 C  
IKFW60N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
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Infineon Availability : 0
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USD 5.9162

Multiples of: 1

Single600 V1.85 V20 V63 A100 nA  TO - 247 - 3TubeSiThrough Hole164 W- 40 C+ 175 C600V Trenchstop
AIKW30N60CTXKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.9162

Multiples of: 1

         TubeSi    600V Trenchstop
IRG4PC60UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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Infineon Availability : 0
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USD 5.9233

Multiples of: 1

Single600 V2 V+/- 20 V75 A   TO - 247 - 3Tube Through Hole520 W- 55 C+ 150 C 
IKW50N60TA


Infineon Technologies IGBT Transistors 600V 50A 100nA
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Infineon Availability : 0
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USD 5.94

Multiples of: 1

Single600 V1.95 V20 V50 A100 nA  TO - 247TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
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