About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGK72N60A3H1


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 7.2182

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 600 V1.35 V20 V75 A100 nA  TO - 264 - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgk72n60
APT25GR120S


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 7.2207

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      521 W   NPT, POWER MOS 8®     
AIKW50N65DH5XKSA1


Transistor: IGBT; 650V; 53.5A; 136W; TO247-3
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Infineon Availability : 0
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USD 7.2214

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      136 W   Trenchstop 5     
IXYT80N90C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 7.2286

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         TubeSi    Planar
APT43GA90B


IGBT Transistors FG, IGBT, 900V, TO-247
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Microchip Availability : 0
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USD 7.2459

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      337 W   POWER MOS 8®, PT     
IXXH50N60B3


IGBT Transistors GenX3 600V XPT IGBTs
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IXYS Availability : 0
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USD 7.3322

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        TO - 247 - 3TubeSiThrough Hole   Ixxh50n60
IXGX60N60C2D1


IGBT Transistors 60 Amps 600V 2.5 V Rds
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IXYS Availability : 0
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USD 7.3359

Multiples of: 1

Single600 V2.5 V+/- 20 V    PLUS 247 - 3Tube Through Hole - 55 C+ 150 CIxgx60n60
IXGX60N60B2D1


IGBT Transistors 60 Amps 600V 1.8 V Rds
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IXYS Availability : 0
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USD 7.3359

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Single600 V1.8 V20 V    PLUS 247 - 3Tube Through Hole - 55 C+ 150 CIxgx60n60
IXGT16N170


IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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IXYS Availability : 0
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USD 7.3456

Multiples of: 1

Single1.7 kV2.7 V20 V32 A100 nA  TO - 268 - 3TubeSiSmd/Smt190 W- 55 C+ 150 CIxgt16n170
AUIRGP4066D1


Transistor: IGBT; IGBT Trench; 600V; 90A; 227W; TO247AC
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Infineon Availability : 0
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USD 7.3511

Multiples of: 1

 600 V2.1 V20 V140 A100 nA454 WAec - Q101TO - 247TubeSiThrough Hole454 W   
APT20GN60SDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-268
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Microchip Availability : 0
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USD 7.3953

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      136 W   Field Stop     
IXXA50N60B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS Availability : 0
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USD 7.3983

Multiples of: 1

Single600 V1.55 V20 V120 A100 nA  TO - 263 - 3 SiSmd/Smt600 W- 55 C+ 175 C 
FGY75T120SQDN


IGBT Transistors IGBT 1200V 75A UFS
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ON Semiconductor Availability : 0
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USD 7.4056

Multiples of: 1

Single1200 V1.7 V20 V150 A200 nA  TO - 247 - 3Tube Through Hole790 W- 55 C+ 175 C 
IXGK60N60B2D1


IGBT Transistors IGBT w/ Diode 600V 60A
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IXYS Availability : 0
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USD 7.4061

Multiples of: 1

Single600 V1.8 V+/- 20 V    TO - 264 - 3Tube Through Hole - 55 C+ 150 CIxgk60n60
AUIRGF65G40D0


Transistor: IGBT; IGBT Trench; 600V; 41A; 313W; TO247AC
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Infineon Availability : 0
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USD 7.4564

Multiples of: 1

Single600 V3 V+/- 20 V62 A+/- 100 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole625 W- 55 C+ 175 C 
IXYA20N120B4HV


IGBT Transistors 4TH GENERATION GENX4TRENCH
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IXYS Availability : 0
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USD 7.4668

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         Tube      
FID60-06D


IXYS IGBT Transistors 60 Amps 600V
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IXYS Availability : 0
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USD 7.4705

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Single600 V1.6 V- 20 V65 A200 nA200 W ISOPLUS I4 - PAC - 5TubeSiThrough Hole200 W- 55 C150 CFid60 - 06D
IXGR35N120BD1


IGBT Transistors 23 Amps 1200V 3.7 Rds
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IXYS Availability : 0
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USD 7.4725

Multiples of: 1

Single1200 V +/- 20 V    ISOPLUS 247 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgr35n120
IXDH30N120


IXYS IGBT Transistors 30 Amps 1200V
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IXYS Availability : 0
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USD 7.5096

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V60 A500 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxdh30n120
FGH75T65UPD_F085


IGBT Transistors 650V/75A FS TRENCH IGBT
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ON Semiconductor Availability : 0
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USD 7.5206

Multiples of: 1

Single650 V2.21 V+/- 20 V150 A400 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CFgh75t65
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