About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS Availability : 0
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USD 8.4299

Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
IKW75N60TA


Infineon Technologies IGBT Transistors 600V 75A 100nA
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Infineon Availability : 0
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USD 8.462

Multiples of: 1

Single600 V1.95 V20 V75 A100 nA  TO - 247TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
STGW60H65DFB-4


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 60 A high speed
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STMicroelectronics Availability : 0
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USD 8.4931

Multiples of: 1

Single650 V1.6 V20 V80 A250 uA  TO - 247 - 4 SiThrough Hole283 W- 55 C+ 175 CStgw60h65dfb - 4
FGY60T120SQDN


Trans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube
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ON Semiconductor Availability : 0
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USD 8.5162

Multiples of: 1

Single1200 V1.7 V25 V120 A200 nA  TO - 247 - 3TubeSiThrough Hole517 W- 55 C+ 175 C 
IKFW90N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
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Infineon Availability : 0
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USD 8.5444

Multiples of: 1

Single600 V1.85 V20 V77 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IXGH40N120A2


IGBT Transistors SGL IGBT 1200V, 80A
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IXYS Availability : 0
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USD 8.5542

Multiples of: 1

Single1.2 kV2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole360 W- 55 C+ 150 CIxgh40n120
IXYH40N120B3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 8.5889

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IXYH30N120C3D1


IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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IXYS Availability : 0
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USD 8.5956

Multiples of: 1

Single1200 V3.7 V30 V66 A100 nA  TO - 247AD - 3TubeSiThrough Hole416 W- 55 C+ 150 CIxyh30n120
IXDH30N120D1


IGBT Transistors 30 Amps 1200V
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IXYS Availability : 0
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USD 8.631

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V60 A500 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxdh30n120
IXXH80N65B4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 8.6621

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole625 W- 55 C+ 175 C 
IXYH24N170C


IGBT Transistors 1700V/58A High Volt
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IXYS Availability : 0
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USD 8.6784

Multiples of: 1

Single1700 V3.5 V20 V58 A25 uA  TO - 247AD - 3 SiThrough Hole500 W- 55 C+ 175 CHigh Voltage
IXGT6N170AHV


IGBT Transistors IGBT NPT-HI VOLTAGE
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IXYS Availability : 0
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USD 8.6904

Multiples of: 1

         TubeSi    High Voltage
IXYH75N120B4


Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247
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IXYS Availability : 0
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USD 8.7015

Multiples of: 1

      1.15 kW   Genx4, XPT     
IRG7PSH50UDPBF


International Rectifier IGBT Transistors
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Infineon Availability : 0
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USD 8.7318

Multiples of: 1

Single1.2 kV2 V+/- 30 V116 A+/- 200 nA  TO - 274AA - 3TubeSiThrough Hole462 W- 55 C+ 150 C 
IXYH30N120C3


IGBT Transistors 1200V XPT GenX3 IGBT
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IXYS Availability : 0
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USD 8.7613

Multiples of: 1

Single1200 V3.7 V30 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh30n120
IXA20RG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 0
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USD 8.7634

Multiples of: 1

          Si    Ixa20rg1200dhglb
IRGP4066D-EPBF


International Rectifier IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 0
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USD 8.7873

Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247ADTubeSiThrough Hole454 W- 55 C  
IRGP50B60PD1PBF


IGBT Transistors 600V Warp2 150kHz
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Infineon Availability : 0
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USD 8.7995

Multiples of: 1

Single600 V2.35 V+/- 20 V75 A 390 W TO - 247TubeSiThrough Hole390 W- 55 C  
APT25GR120SD15


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 8.8079

Multiples of: 1

      521 W   NPT, POWER MOS 8®     
IXBT6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS Availability : 0
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USD 8.8704

Multiples of: 1

Single1.7 kV2.84 V+/- 20 V12 A100 nA  TO - 268 - 3TubeSiSmd/Smt75 W- 55 C+ 150 CIxbt6n170
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