About MOSFETs

On Semiconductor MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDP6670AL


Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
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ON Semiconductor Availability : 0
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USD 0.7175

Multiples of: 605

           Rail/Tube    enhancement  
NDPL070N10BG


MOSFET NCH 70A 100V Power M
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USD 0.7175

Multiples of: 605

70 A100 V12.8 mOhmsn - channel 2 V- 55 C+ 175 C72 Wthrough holeTO - 220 - 3Tubesi1 channel+/- 20 V26 nCenhancement  
NVD5862NT4G


MOSFET NFET 60V 98A 5.7MOHM
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USD 0.7176

Multiples of: 1

98 A60 V5.7 mOhmsN - Channel     Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
FCPF250N65S3L1


MOSFET SuperFET3 650V 250 mOhm, TO220F PKG
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USD 0.7178

Multiples of: 1

12 A650 V210 mOhmsN - Channel 2.5 V- 55 C+ 150 C31 WThrough HoleTO - 220F - 3 Si1 Channel30 V24 nCEnhancement  
FQPF11N40C


MOSFET 400V N-Channel Advance Q-FET
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USD 0.7185

Multiples of: 1

   n - channel  - 55 C+ 150 C through holeTO - 220FTube       
FDMC7660S


MOSFET 30V N-Chan SyncFET PowerTrench
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USD 0.7188

Multiples of: 3000

20 A30 V2.5 mOhmsn - channel 1.6 V  2.3 Wsmd/smtPOWER 33Reelsi1 channel20 V47 nC  syncfet
FQD6N60CTM_WS


MOSFET 600V N-Ch MOSFET QFET
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USD 0.7194

Multiples of: 1

4 A600 V2 Ohmsn - channel30 V - 55 C+ 150 C80 Wsmd/smtDPAK - 3Reel    enhancement  
FDPF680N10T


MOSFET N-Ch PowerTrench
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USD 0.7199

Multiples of: 1

12 A100 V68 mOhmsn - channel  - 55 C+ 150 C24 Wthrough holeTO - 220FTubesi1 channel20 V enhancement powertrench
NTMFS4982NFT1G


MOSFET FETKY SO8FL 30V 129A 1.3M
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USD 0.7205

Multiples of: 1

207 A30 V1.4 mOhmsn - channel20 V1.7 V- 55 C+ 150 C89.3 Wsmd/smtSO - 8FLReelsi1 channel20 V84 nC   
FQPF33N10L


MOSFET 100V N-Ch QFET Logic Level
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USD 0.7222

Multiples of: 1000

18 A100 V52 mOhmsn - channel  - 55 C+ 175 C41 Wthrough holeTO - 220FTubesi1 channel20 V enhancement qfet
NTTFS4985NFTAG


MOSFET NFET U8FL 30V 64A 5.2MOHM
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USD 0.7225

Multiples of: 601

22 A30 V3.5 mOhmsn - channel    2.69 Wsmd/smtWDFN - 8Reelsi1 channel     
NVD5890NLT4G


MOSFET Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level. T4G
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USD 0.7229

Multiples of: 1

123 A40 V3.7 mOhmsn - channel     smd/smtTO - 252 - 3Reelsi1 channel   aec - q101 
MTD6N20ET4G


MOSFET NFET DPAK 200V 6A 700mOhm
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USD 0.7243

Multiples of: 1

6 A200 V460 mOhmsn - channel20 V - 55 C+ 150 C50 Wsmd/smtDPAK - 3Reel    enhancement  
NTB45N06G


MOSFET 60V 45A N-Channel
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USD 0.7243

Multiples of: 1

45 A60 V26 mOhmsn - channel20 V - 55 C+ 175 C125 Wsmd/smtD2PAK - 3Tube    enhancement  
NVTFS002N04CLTAG


MOSFET 40V 2.2 mOhm 142A Single N-Channel
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USD 0.7254

Multiples of: 1

           Cut Tape       
FDD14AN06LA0_F085


Fairchild Semiconductor MOSFET 60V N-CHAN PwrTrench
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USD 0.7266

Multiples of: 1

50 A60 V12.8 mOhmsn - channel  - 55 C+ 175 C125 Wthrough holeDPAK - 3Reelsi1 channel     
FDMS6681Z


mosfet p trench 30v 21.1a 3v @ 250ua 3.2 m @ 22.1a,10v power 56 rohs
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USD 0.7266

Multiples of: 1

                   
FDMS3606S


MOSFET DUAL N-Channel Power Trench MOSFET
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USD 0.7273

Multiples of: 3000

13 A , 27 A30 v , 30 V7.8 mOhms , 1.9 mOhmsn - channel 1.1 v , 1.1 V- 55 C+ 150 C2.2 w , 2.5 Wsmd/smtPOWER56 - 8Reelsi2 channel+/- 20 v , +/- 20 V29 nC , 83 nCenhancement powertrench
FDP12N50


MOSFET 500V N-Channel
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USD 0.7276

Multiples of: 1000

   n - channel  - 55 C+ 150 C through holeTO - 220 - 3Tube       
SFT1342-TL-W


ON Semiconductor MOSFET PCH -60V -12A TP-FA(DPAK)
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USD 0.7282

Multiples of: 1

12 A60 V96 mOhmsp - channel 1.2 V + 150 C15 Wsmd/smtTO - 252 - 3Reelsi1 channel- 4 V26 nCenhancement  
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