MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
Rev. V3
DC - 3.5 GHz
Features
GaN on SiC D-Mode Transistor Technology
Unmatched, Ideal for Pulsed / CW Applications
50 V Typical Bias, Class AB
Common-Source Configuration
Thermally-Enhanced 3 x 6 mm 14-Lead DFN
MTTF = 600 years (T < 200C)
J
Halogen-Free Green Mold Compound
RoHS* Compliant and 260C Reflow Compatible
MSL-1
Description
The MAGX-000035-01000P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall power transistor size, cost
and weight in a TRUE SMT plastic-packaging
technology.
Functional Schematic
Use of an internal stress buffer technology allows
5 6 7
1 2 3 4
reliable operation at junction temperatures up to
200C. The small package size and excellent RF
performance make it an ideal replacement for costly
NC
NC NC NC
flanged or metal-backed module components.
G G G
15
1
Ordering Information
D D D
NC
NC NC NC
Part Number Package
MAGX-000035-01000P Bulk Packaging
8
14 13 12 11 10 9
3
MAGX-000035-0100TP 500 Piece Reel
Pin Configuration
900 - 1400 MHz Pin No. Function Pin No. Function
MAGX-L20035-01000P
Sample Board
1 No Connection 8 No Connection
2
MAGX-000035-PB4PPR Custom Sample Board
2 No Connection 9 No Connection
1. Reference Application Note M513 for reel size information.
3 V /RF 10 V /RF
GG IN DD OUT
2. When ordering this sample evaluation board, choose a
standard frequency range indicated on page 4/5 or specify a
4 V /RF 11 V /RF
GG IN DD OUT
desired custom range. Custom requests may increase lead
times.
5 V /RF 12 V /RF
GG IN DD OUT
6 No Connection 13 No Connection
7 No Connection 14 No Connection
4
15 Paddle
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC. connected to RF and DC ground.
1
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
Rev. V3
DC - 3.5 GHz
Typical Performance: V = 50 V, I = 30 mA, T = 25C
DD DQ A
Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units
Gain 17 15 14 14 dB
Saturated Power (P ) 13 11 10 10 W
SAT
Power Gain at P 15 14 13 12 dB
SAT
PAE @ P 65 55 53 50 %
SAT
5
Electrical Specifications : Freq. = 1.6 GHz, T = 25C, Z = 50
A 0
Parameter Symbol Min. Typ. Max. Units
CW RF FUNCTIONAL TESTS: V = 50 V, I = 30 mA, P2.5 dB
DD DQ
CW Output Power P - 10 - W
OUT
Pulsed RF FUNCTIONAL TESTS: V = 50 V, I = 30 mA, P2.5 dB, Pulse Width = 1 ms, Duty Cycle = 10%
DD DQ
Pulsed Output Power P 9.2 10.6 - W
OUT
Pulsed Power Gain G 14.2 14.8 - dB
P
Pulsed Drain Efficiency 52 56 - %
D
Load Mismatch Stability VSWR-S - 5:1 - -
Load Mismatch Tolerance VSWR-T - 10:1 - -
5. Electrical specifications measured in MACOM RF evaluation boards. See recommended tuning solutions on page 4.
Electrical Characteristics: T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
DC CHARACTERISTICS
Drain-Source Leakage Current V = -8 V, V = 175 V I - - 1.0 mA
GS DS DS
Gate Threshold Voltage V = 5 V, I = 2 mA V -5 -3 -2 V
DS D GS (th)
Forward Transconductance V = 5 V, I = 250 mA G 0.20 - - S
DS D M
DYNAMIC CHARACTERISTICS
Input Capacitance V = 0 V, V = -8 V, F = 1 MHz C - 2.2 - pF
DS GS ISS
Output Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.9 - pF
DS GS OSS
Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.1 - pF
DS GS RSS
2
22
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit: