MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
Rev. V1
15 W, DC - 3.5 GHz
Features
MAGX-000035-015000 (Flanged)
GaN on SiC Depletion Mode Transistor
Common-Source Configuration
Broadband Class AB Operation
Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
RoHS* Compliant
+50V Typical Operation
MTTF = 600 years (T < 200C)
J
Primary Applications
Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
Air Traffic Control Radar - Commercial
Weather Radar - Commercial
Military Radar - Military
MAGX-000035-01500S (Flangeless)
Public Radio
Industrial, Scientific and Medical
SATCOM
Instrumentation
Description
The MAGX-000035-01500X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
todays demanding application needs.
Ordering Information
The MAGX-000035-01500X is constructed using a
Part Number Description
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
MAGX-000035-015000 Flanged, Bulk Packaging
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
MAGX-000035-01500S Flangeless, Bulk Packaging
mismatched load conditions unparalleled with older
semiconductor technologies.
Sample Board
MAGX-L20035-015000
(1.2 - 1.4 GHz, Flanged)
Sample Board
MAGX-L20035-01500S
(1.2 - 1.4 GHz, Flangeless)
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1 1 1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
Rev. V1
15 W, DC - 3.5 GHz
1
Electrical Specifications : Freq. = 1.2 - 1.4 GHz, T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
RF Functional Tests: V = 50 V, I = 15 mA, 1 ms Pulse, 10% Duty
DD DQ
Output Power P = 0.5 W P 15.0 17.7 - W
IN OUT
Power Gain P = 0.5 W G 14.8 15.5 - dB
IN P
Drain Efficiency P = 0.5 W 55 63 - %
IN D
Droop P = 0.5 W Droop - 0.1 0.4 dB
IN
Load Mismatch Stability P = 0.5 W VSWR-S - 5:1 - -
IN
Load Mismatch Tolerance P = 0.5 W VSWR-T - 10:1 - -
IN
Electrical Characteristics: T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
DC Characteristics
Drain-Source Leakage Current V = -8 V, V = 175 V I - - 750 A
GS DS
DS
Gate Threshold Voltage V = 5 V, I = 2 mA
DS D V -5 -3 -2 V
GS (TH)
Forward Transconductance V = 5 V, I = 500 mA
G 0.35 - - S
DS D M
Dynamic Characteristics
Input Capacitance V = 0 V, V = -8 V, F = 1 MHz
DS GS C - 4.4 - pF
ISS
Output Capacitance V = 50 V, V = -8 V, F = 1 MHz
C - 1.9 - pF
DS GS OSS
Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.2 - pF
DS GS RSS
Correct Device Sequencing
Turning the device ON
1. Set V to the pinch-off (V ), typically -5 V.
GS P
2. Turn on V to nominal voltage (+50V).
DS
3. Increase V until the I current is reached.
GS DS
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V down to V
GS P.
3. Decrease V down to 0 V.
DS
4. Turn off V
GS.
1. Electrical Specifications measured in MACOM RF evaluation board.
2 2 2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298