NTE5417 thru NTE5419 Silicon Controlled Rectifier (SCR) 10 Amp, TO220 Isolated Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +110C), V C RRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak OffState Voltage (T = +110C), V C DRM NTE5417 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5418 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5419 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On State Current (T = +80C, Conduction Angle of 180), I . . . . . . . . . . . . . . . . . . 10A C T(RMS) Peak Surge (NonRepetitive) On State Current (One Cycle at 50 or 60Hz), I . . . . . . . . . . 100A TSM Peak GateTrigger Current (3s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A GTM Peak Gate Power Dissipation (I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GT GTM GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max, V = Max, 0.5 mA RRM RRM DRM T = +110C C I 0.5 mA DRM Maximum Peak OnState Voltage V I = 10A 1.8 V TM T DC Holding Current I Gate Open 30 mA HOLD DC GateTrigger Current I V = 6VDC, R = 60 25 mA GT D L DC GateTrigger Voltage V V = 6VDC, R = 60 1.5 V GT D L Gate Controlled TurnOn Time t I = 100mA 2.5 s gt GT Critical Rate of OffState Voltage dv/dt Gate Open, T = +100C 200 V/s C (critical).420 (10.67) Max .110 (2.79) Isolated .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode