MOSFET Power, N-Channel, Ultrafet 150 V, 75 A, 16 m HUF75852G3 Features www.onsemi.com Ultra Low On Resistance r = 0.016 , V = 10 V DS(ON) GS Simulation Models D Temperature Compensated PSPICE and SABER Electrical Models Spice and SABER Thermal Impedance Models G www.onsemi.com Peak Current vs Pulse Width Curve S UIS Rating Curve This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant Packing TO2473LD CASE 340CK MARKING DIAGRAMS Figure 1. Y&Z&3&K 75852G Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot 75852G = Specific Device Code ORDERING INFORMATION Part Number Package Brand HUF75852G3 TO2473LD 75852G Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2020 Rev. 3 HUF75852G3/DHUF75852G3 ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted C Description Symbol Ratings Units Drain to Source Voltage (Note 1) V 150 V DSS Drain to Gate Voltage (R = 20 k ) (Note 1) V 150 V GS DGR Gate to Source Voltage V +20 V GS Drain Current Continuous (T = 25C, V = 10 V) (Figure 2) I 75 A C GS D Continuous (T = 100C, V = 10 V) (Figure 2) I 75 A C GS D Pulsed Drain Current I Figure 4 DM Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation P 500 W D Derate Above 25C 3.33 W/C Operating and Storage Temperature T , T 55 to 175 C J STG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C L Package Body for 10 s, See Techbrief TB334 T 260 C pkg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. T = 25C to 150C. J www.onsemi.com 2