IRF740B/IRFS740B
November 2001
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect 10A, 400V, R = 0.54 @V = 10 V
DS(on) GS
transistors are produced using Fairchilds proprietary,
Low gate charge ( typical 41 nC)
planar, DMOS technology.
Low Crss ( typical 35 pF)
This advanced technology has been especially tailored to
Fast switching
minimize on-state resistance, provide superior switching
100% avalanche tested
performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
D
G
TO-220 TO-220F
G D S
G D
S
IRF Series IRFS Series
S
Absolute Maximum Ratings T = 25C unless otherwise noted
C
Symbol Parameter IRF740B IRFS740B Units
V Drain-Source Voltage 400 V
DSS
I - Continuous (T = 25C)
Drain Current 10 10 * A
D C
- Continuous (T = 100C)
6.3 6.3 * A
C
I (Note 1)
Drain Current - Pulsed 40 40 * A
DM
V
Gate-Source Voltage 30 V
GSS
E (Note 2)
Single Pulsed Avalanche Energy 450 mJ
AS
I
Avalanche Current (Note 1) 10 A
AR
E (Note 1)
Repetitive Avalanche Energy 13.4 mJ
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
P Power Dissipation (T = 25C)
134 44 W
D C
- Derate above 25C 1.08 0.35 W/C
T , T
Operating and Storage Temperature Range -55 to +150 C
J STG
Maximum lead temperature for soldering purposes,
T
300 C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter IRF740B IRFS740B Units
R
Thermal Resistance, Junction-to-Case 0.93 2.86 C/W
JC
R
Thermal Resistance, Case-to-Sink 0.5 -- C/W
CS
R
Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W
JA
2001 Fairchild Semiconductor Corporation Rev. A, November 2001IRF740B/IRFS740B
Electrical Characteristics T = 25C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV V = 0 V, I = 250 A
Drain-Source Breakdown Voltage 400 -- -- V
DSS GS D
BV
Breakdown Voltage Temperature
DSS
I
= 250 A, Referenced to 25C -- 0.4 -- V/C
D
/ T Coefficient
J
I V = 400 V, V = 0 V -- -- 10 A
DSS DS GS
Zero Gate Voltage Drain Current
V = 320 V, T = 125C
-- -- 100 A
DS C
I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA
GSSF GS DS
I V = -30 V, V = 0 V
Gate-Body Leakage Current, Reverse -- -- -100 nA
GSSR GS DS
On Characteristics
V Gate Threshold Voltage V = V , I = 250 A 2.0 -- 4.0 V
GS(th) DS GS D
R
Static Drain-Source
DS(on)
V = 10 V, I = 5.0 A
-- 0.43 0.54
GS D
On-Resistance
g Forward Transconductance V = 40 V, I = 5.0 A (Note 4) -- 9.6 -- S
FS DS D
Dynamic Characteristics
C
Input Capacitance -- 1400 1800 pF
iss
V = 25 V, V = 0 V,
DS GS
C
Output Capacitance -- 150 195 pF
oss
f = 1.0 MHz
C
Reverse Transfer Capacitance -- 35 45 pF
rss
Switching Characteristics
t
Turn-On Delay Time -- 20 50 ns
d(on)
V = 200 V, I = 10 A,
DD D
t
Turn-On Rise Time -- 80 170 ns
r
R = 25
G
t
Turn-Off Delay Time -- 125 260 ns
d(off)
(Note 4 , 5)
t
Turn-Off Fall Time -- 85 180 ns
f
Q
Total Gate Charge -- 41 53 nC
g
V = 320 V, I = 10 A,
DS D
Q
Gate-Source Charge V = 10 V -- 7 -- nC
gs
GS
(Note 4, 5)
Q
Gate-Drain Charge -- 17 -- nC
gd
Drain-Source Diode Characteristics and Maximum Ratings
I Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A
S
I
Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A
SM
V Drain-Source Diode Forward Voltage V = 0 V, I = 10 A -- -- 1.5 V
SD GS S
t
Reverse Recovery Time V = 0 V, I = 10 A, -- 330 -- ns
rr
GS S
(Note 4)
dI / dt = 100 A/ s
Q Reverse Recovery Charge -- 3.57 -- C
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.9mH, I = 10A, V = 50V, R = 25 , Starting T = 25C
AS DD G J
3. I 10A, di/dt 300A/ s, V BV Starting T = 25C
SD DD DSS, J
4. Pulse Test : Pulse width 300 s, Duty cycle 2%
5. Essentially independent of operating temperature
2001 Fairchild Semiconductor Corporation Rev. A, November 2001