MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor NChannel www.onsemi.com Features 2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and GATE PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 DRAIN Compliant MAXIMUM RATINGS 3 Rating Symbol Value Unit SOT23 (TO236) CASE 318 DrainSource Voltage V 25 Vdc DS 1 STYLE 10 2 GateSource Voltage V 25 Vdc GS Gate Current I 10 mAdc G THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D 6x M (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg 6x = Device Code x = U for MMBFJ309L, SMMBFJ309L Stresses exceeding those listed in the Maximum Ratings table may damage the x = T for MMBFJ310L, SMMBFJ310L device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR5 = 1.0 x 0.75 x 0.062 in. = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ309LT1G, SOT23 3,000 / Tape & SMMBFJ309LT1G (PbFree) Reel MMBFJ310LT1G, SOT23 3,000 / Tape & SMMBFJ310LT1G (PbFree) Reel SMMBFJ310LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 8 MMBFJ309LT1/DMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V 25 Vdc (BR)GSS (I = 1.0 Adc, V = 0) G DS Gate Reverse Current (V = 15 Vdc) I 1.0 nAdc GS GSS Gate Reverse Current (V = 15 Vdc, T = 125C) 1.0 Adc GS A Gate Source Cutoff Voltage MMBFJ309 V 1.0 4.0 Vdc GS(off) (V = 10 Vdc, I = 1.0 nAdc) MMBFJ310, SMMBFJ310 2.0 6.5 DS D ON CHARACTERISTICS ZeroGateVoltage Drain Current MMBFJ309 I 12 30 mAdc DSS (V = 10 Vdc, V = 0) MMBFJ310, SMMBFJ310 24 60 DS GS GateSource Forward Voltage V 1.0 Vdc GS(f) (I = 1.0 mAdc, V = 0) G DS SMALLSIGNAL CHARACTERISTICS Forward Transfer Admittance Y 8.0 18 mmhos fs (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) DS D Output Admittance y 250 mhos os (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) DS D Input Capacitance C 5.0 pF iss (V = 10 Vdc, V = 0 Vdc, f = 1.0 MHz) GS DS Reverse Transfer Capacitance C 2.5 pF rss (V = 10 Vdc, V = 0 Vdc, f = 1.0 MHz) GS DS Equivalent ShortCircuit Input Noise Voltage e 10 n nV Hz (V = 10 Vdc, I = 10 mAdc, f = 100 Hz) DS D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2