X-On Electronics has gained recognition as a prominent supplier of RMW180N03TB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RMW180N03TB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RMW180N03TB ROHM

RMW180N03TB electronic component of ROHM
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See Product Specifications
Part No.RMW180N03TB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Trans MOSFET N-CH 30V 18A
Datasheet: RMW180N03TB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3375 ea
Line Total: USD 1.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3375
10 : USD 1.0488
100 : USD 0.8153
500 : USD 0.691
1000 : USD 0.5629

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3375
10 : USD 1.0488
100 : USD 0.8153
500 : USD 0.691
1000 : USD 0.5629

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1130
Multiples : 1
1130 : USD 0.0295

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
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Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RMW180N03TB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RMW180N03TB and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4.5V Drive Nch MOSFET RMW180N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8 (8) (7) (6) (5) Features 0~0.1 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4) 0.22 0.4 3) Low voltage drive(4.5V drive). 0.9 1.27 5.0 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 RMW180N03 (1) Source (2) Source 2 (3) Source (4) Gate 1 (5) Drain Absolute maximum ratings (Ta = 25 C) (6) Drain (7) Drain Parameter Symbol Limits Unit (1) (2) (3) (4) (8) Drain Drain-source voltage V 30 V DSS 1 ESD PROTECTION DIODE 2 BODY DIODE Gate-source voltage V 20 V GSS Continuous I 18 A D Drain current *1 Pulsed I 72 A DP Continuous I 2.5 A Source current S (Body Diode) *1 Pulsed I 72 A SP *2 Power dissipation P 3.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm 40mm Cu BOARD Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 41.7 C / W * MOUNTED ON 40mm 40mm Cu BOARD www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6 5.0 0.5 0.5 6.0Data Sheet RMW180N03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D - 4.0 5.6 I =18A, V =10V Static drain-source on-state D GS R * m DS (on) resistance - 5.5 7.7 I =18A, V =4.5V D GS ** Forward transfer admittance l Y l15 - - S I =18A, V =10V fs D DS Input capacitance C - 1250 - pF V =15V iss DS Output capacitance C - 400 - pF V =0V oss GS Reverse transfer capacitance C - 145 - pF f=1MHz rss Turn-on delay time t - 14 - ns I =9A, V 15V ** d(on) D DD Rise time t - 39 - ns V =10V ** r GS Turn-off delay time t - 39 - ns R =1.67 d(off)** L Fall time t ** - 12 - ns R =10 f G Total gate charge Q ** - 24 - nC I =18A, V 15V g D DD Gate-source charge Q ** - 4.4 - nC V =10V gs GS Gate-drain charge Q - 4.7 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =2.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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