Data Sheet
4.5V Drive Nch MOSFET
RMW180N03
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
PSOP8
(8) (7) (6) (5)
Features
0~0.1
1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
1pin mark
(1) (2) (3) (4)
0.22
0.4
3) Low voltage drive(4.5V drive).
0.9
1.27
5.0
Application
Switching
Packaging specifications Inner circuit
Package Taping
(8) (7) (6) (5)
Type
Code TB
Basic ordering unit (pieces) 2500
RMW180N03
(1) Source
(2) Source
2
(3) Source
(4) Gate
1
(5) Drain
Absolute maximum ratings (Ta = 25 C)
(6) Drain
(7) Drain
Parameter Symbol Limits Unit
(1) (2) (3) (4)
(8) Drain
Drain-source voltage V 30 V
DSS
1 ESD PROTECTION DIODE
2 BODY DIODE
Gate-source voltage V 20 V
GSS
Continuous I 18 A
D
Drain current
*1
Pulsed I 72 A
DP
Continuous I 2.5 A
Source current
S
(Body Diode) *1
Pulsed I 72 A
SP
*2
Power dissipation P 3.0 W
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 MOUNTED ON 40mm 40mm Cu BOARD
Thermal resistance
Parameter Symbol Limits Unit
*
Channel to Ambient Rth (ch-a) 41.7 C / W
* MOUNTED ON 40mm 40mm Cu BOARD
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2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A
1/6
5.0
0.5 0.5
6.0Data Sheet
RMW180N03
Electrical characteristics (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage I -- 10 AV =20V, V =0V
GSS GS DS
Drain-source breakdown voltage V 30 - - V I =1mA, V =0V
(BR)DSS D GS
Zero gate voltage drain current I -- 1 AV =30V, V =0V
DSS DS GS
Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA
GS (th) DS D
- 4.0 5.6 I =18A, V =10V
Static drain-source on-state
D GS
R *
m
DS (on)
resistance
- 5.5 7.7 I =18A, V =4.5V
D GS
**
Forward transfer admittance l Y l15 - - S I =18A, V =10V
fs D DS
Input capacitance C - 1250 - pF V =15V
iss DS
Output capacitance C - 400 - pF V =0V
oss GS
Reverse transfer capacitance C - 145 - pF f=1MHz
rss
Turn-on delay time t - 14 - ns I =9A, V 15V
**
d(on) D DD
Rise time t - 39 - ns V =10V
**
r GS
Turn-off delay time t - 39 - ns R =1.67
d(off)** L
Fall time t ** - 12 - ns R =10
f G
Total gate charge Q ** - 24 - nC I =18A, V 15V
g D DD
Gate-source charge Q ** - 4.4 - nC V =10V
gs GS
Gate-drain charge Q - 4.7 - nC
**
gd
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
*
Forward Voltage V - - 1.2 V I =2.5A, V =0V
SD s GS
*Pulsed
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2011 ROHM Co., Ltd. All rights reserved.
2/6 2011.03 - Rev.A