GT20N135SRA Discrete IGBTs Silicon N-Channel IGBT GT20N135SRAGT20N135SRAGT20N135SRAGT20N135SRA 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Dedicated to Voltage-Resonant Inverter Switching Applications Dedicated to Soft Switching Applications Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT t = 0.25 s (typ.) (I = 40 A) f C (5) Low saturation voltage: V = 1.60 V (typ.) (I = 20 A, T = 25 ) CE(sat) C a (6) High junction temperature: T = 175 (max) j 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-247 Start of commercial production 2019-10 2019 2019-09-05 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0GT20N135SRA 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 , unless otherwise specified), unless otherwise specified), unless otherwise specified), unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-emitter voltage (Note 2) V 1350 V CES Gate-emitter voltage V 25 V GES Collector current (DC) (T = 25 ) I 40 A c C Collector current (DC) (T = 100 ) 20 c Collector current (1 ms) I 80 A CP Non-repetitive peak collector current (Note 1) I 220 A CSM Diode forward current (DC) (T = 25 ) I 40 A c F Diode forward current (DC) (T = 100 ) 20 c Diode forward current (100 s) I 80 A FP Collector power dissipation (T = 25 ) P 312 W c C Junction temperature (Note 2) T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: The maximum value of the capacitor charging current limited on T < 175 and t < 3 s j Note 2: To perform derating ensures the device reliability. In operation, the collector emitter voltage(V ) should be below 1150 V, as well as junction temperature(T ) CES j should be below 140 . 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Junction-to-case thermal resistance R 0.48 /W th(j-c) 2019 2019-09-05 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0