About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW20N65R5XKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 1
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USD 1.467
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        TO - 247 - 3TubeSi    Rc
HGTG12N60C3D


Transistor: IGBT; 600V; 12A; 104W; TO247
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ON Semiconductor Availability : 1
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USD 1.5811
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      104 W         
STGW35HF60W


IGBT Transistors Ultra Fast IGBT 35A 600V
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STMicroelectronics Availability : 1
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USD 1.6418
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  2.5 V20 V60 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 CStgw35hf60w
SPT25N120F1A1


TO-247-3 IGBTs ROHS
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SPTECH Availability : 1
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USD 1.7421
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STGW40H65DFB


IGBT Transistors 600V 40A trench gate field-stop IGBT
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STMicroelectronics Availability : 1
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USD 2.2178
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Single650 V1.8 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb
FGH40N60SFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor Availability : 1
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USD 3.1282
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      116 W         
FGH20N60SFDTU


IGBT Transistors 600V 20A Field Stop
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ON Semiconductor Availability : 1
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USD 3.6174
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Single600 V 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh20n60sfd
NGTB40N120FL2WAG


IGBT Transistors 1200V/40 FAST IGBT FSII T
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ON Semiconductor Availability : 1
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USD 3.9618
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Single1200 V 30 V160 A200 nA  TO - 247 - 4TubeSiThrough Hole268 W- 55 C+ 175 C 
NGTB40N60L2WG


ON Semiconductor IGBT Transistors 600V40A FAST IGBT FSII T
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ON Semiconductor Availability : 1
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USD 4.1515
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Single600 V2 V20 V80 A200 nA  TO - 247 - 3Tube Through Hole417 W- 55 C+ 175 C 
RGW00TK65DGVC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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ROHM Availability : 1
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USD 4.2205
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole89 W- 40 C+ 175 C 
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