About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Global Stock ⓘ (▲▼)Price(USD

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH8N250C


Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247
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IXYS Availability : 0
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USD 10.1101

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      280 W   XPT     
IRG4PC50UPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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Infineon Availability : 0
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USD 10.1196

Multiples of: 1

Single600 V2 V20 V55 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
SGF5N150UFTU


Fairchild Semiconductor IGBT Transistors 1500V 5A
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ON Semiconductor Availability : 0
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USD 10.1649

Multiples of: 1

Single1500 V4.7 V+/- 20 V10 A+/- 100 nA62.5 W TO - 3PF - 3TubeSiThrough Hole62.5 W- 55 C+ 150 CSgf5n150
IXYT20N120C3D1HV


IGBT Transistors Disc IGBT XPT-GenX3 TO-268AA
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IXYS Availability : 0
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USD 10.2022

Multiples of: 1

Single1.2 kV3.4 V20 V36 A100 nA  TO - 268HV - 2 SiSmd/Smt230 W- 55 C+ 150 C 
IXGX72N60B3H1


IGBT Transistors 72 Amps 600V
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IXYS Availability : 0
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USD 10.2039

Multiples of: 9

 600 V1.5 V20 V75 A100 nA  PLUS 247 - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgx72n60
APT25GP90BG


IGBT Transistors FG, IGBT, 900V, 25A, TO-247, RoHS
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Microchip Availability : 0
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USD 10.204

Multiples of: 1

      417 W   POWER MOS 7®, PT     
IRG4PSH71UPBF


IGBT Transistors 1200V UltraFast 8-40kHz
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Infineon Availability : 0
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USD 10.2564

Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IXGT24N170


IGBT Transistors 24 Amps 1200 V 3.3 V Rds
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IXYS Availability : 0
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USD 10.2944

Multiples of: 1

Single1.7 kV2.5 V20 V50 A100 nA  TO - 268 - 3TubeSiSmd/Smt250 W- 55 C+ 150 CIxgt24n170
IXGH28N120BD1


IGBT Transistors 28 Amps 1200V 3.50 Rds
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IXYS Availability : 0
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USD 10.3068

Multiples of: 1

Single1200 V +/- 20 V    TO - 247 AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh28n120
FGY40T120SMD


IGBT Transistors 1200V 40A FS2 Trench IGBT
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ON Semiconductor Availability : 0
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USD 10.3675

Multiples of: 41

Single1.2 kV2 V+/- 30 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy40t120smd
STGY50NC60WD


IGBT Transistors 600V 65A N-Channel
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STMicroelectronics Availability : 0
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USD 10.439

Multiples of: 1

Single600 V +/- 20 V    MAX247 - 3TubeSiThrough Hole - 55 C+ 150 CStgy50nc60wd
APT100GN60B2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 0
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USD 10.4677

Multiples of: 1

      625 W   Field Stop     
IXGH25N160


IGBT Transistors 75 Amps 1600V 2.5 Rds
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IXYS Availability : 0
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USD 10.4904

Multiples of: 1

Single1600 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh25n160
IXGK320N60A3


IGBT Transistors 320 Amps 600V
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IXYS Availability : 0
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USD 10.638

Multiples of: 1

Single600 V1.05 V20 V320 A400 nA  TO - 264 - 3TubeSiThrough Hole1 kW- 55 C+ 150 CIxgk320n60
IXYH16N170CV1


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 10.6498

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole310 W- 55 C+ 175 C 
FGH60N60UFDTU-F085


IGBT Transistors N-Ch/ 60A 600V FS IGBT
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ON Semiconductor Availability : 0
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USD 10.6507

Multiples of: 1

                
IXSH35N140A


IGBT Transistors 70 Amps 1400V 4 Rds
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IXYS Availability : 0
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USD 10.7172

Multiples of: 1

Single1400 V4 V+/- 20 V    TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh35n140
IXSH35N120A


IGBT Transistors HIGH SPEED IGBT 1200V, 70A
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IXYS Availability : 0
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USD 10.7289

Multiples of: 1

Single1200 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 C 
AUIRGP4063D-E


International Rectifier IGBT Transistors Automotive 600V Trench IGBT
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Infineon Availability : 0
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USD 10.7676

Multiples of: 1

 600 V2.14 V20 V96 A100 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole330 W   
IXGT24N170A


IGBT Transistors 24 Amps 1200 V 5 V Rds
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IXYS Availability : 0
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USD 10.8209

Multiples of: 1

Single1700 V4.5 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt24n170
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