About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXSK35N120AU1


IGBT Transistors 70 Amps 1200V 4 Rds
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IXYS Availability : 0
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USD 14.9807

Multiples of: 1

Single1200 V +/- 20 V    TO - 264AA - 3Tube Through Hole - 55 C+ 150 CIxsk35n120
IXXK160N65C4


IGBT Transistors 650V/290A Trench IGBT GenX4 XPT
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IXYS Availability : 0
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USD 15.1925

Multiples of: 25

         Tube      
IXGT32N170A


IGBT Transistors 72 Amps 1700 V 5.0 V Rds
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IXYS Availability : 0
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USD 15.2593

Multiples of: 1

Single1700 V4 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt32n170
IXGR50N60B


Discrete IGBT High Speed Serie
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IXYS Availability : 0
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USD 15.4612

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         -      
IXXX140N65B4H1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS Availability : 0
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USD 15.4618

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Single       PLUS247 - 3Tube Through Hole1200 W- 55 C+ 175 C 
IXA30PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 0
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USD 15.484

Multiples of: 1

Single1200 V1.9 V20 V43 A500 nA  ISOPLUS - 9 SiSmd/Smt150 W- 55 C+ 150 CIxa30pg1200dhglb
APT40GP90B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 0
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USD 15.5239

Multiples of: 1

      543 W   POWER MOS 7®, PT     
IXGK400N30A3


IGBT Transistors 400 Amps 300V
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IXYS Availability : 0
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USD 15.6793

Multiples of: 1

Single300 V1.15 V20 V400 A400 nA  TO - 264 - 3TubeSiThrough Hole1 kW- 55 C+ 150 CIxgk400n30
IRG4PF50WPBF


IGBT Transistors 900V Warp 20-100kHz
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Infineon Availability : 0
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USD 15.6894

Multiples of: 1

Single900 V2.7 V+/- 20 V51 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
IXXK200N60B3


IGBT Transistors GenX3 XPT 600V
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IXYS Availability : 0
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USD 15.7823

Multiples of: 1

Single600 V1.4 V20 V380 A200 nA  TO - 264 - 3TubeSiThrough Hole1.63 kW- 55 C+ 175 CIxxk200n60
IXXK200N60C3


IGBT Transistors XPT 600V IGBT GenX3
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IXYS Availability : 0
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USD 15.7823

Multiples of: 1

Single600 V1.6 V20 V340 A200 nA  TO - 264 - 3TubeSiThrough Hole1.63 kW- 55 C+ 175 CIxxk200n60
IXA40PF1200TDHGLB


IGBT Transistors SMPD IGBTs
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IXYS Availability : 0
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USD 15.9732

Multiples of: 1

                
IXGX82N120B3


IGBT Transistors GenX3 1200V IGBTs
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IXYS Availability : 0
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USD 15.9945

Multiples of: 1

        TO - 247 - 3TubeSiThrough Hole   Ixgx82n120
IXXH140N65C4


Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
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IXYS Availability : 0
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USD 16.2446

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      1.2 kW   Genx4, Trench, Xpt     
IXYH85N120A4


IGBT Transistors IGBT XPT GEN 4 1200V TO247
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IXYS Availability : 0
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USD 16.3532

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         Tube      
IXGF32N170


IGBT Transistors 26 Amps 1700V 3.5 V Rds
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IXYS Availability : 0
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USD 16.3728

Multiples of: 1

Single1.7 kV2.7 V20 V44 A100 nA  ISOPLUS I4 - PAK - 3TubeSiThrough Hole200 W- 55 C+ 150 CIxgf32n170
APT100GN60LDQ4G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 0
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USD 16.4043

Multiples of: 1

Single600 V1.5 V30 V229 A600 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 175 C 
IXYX100N120B3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 16.4052

Multiples of: 1

        TO - 247PLUS - 3 SiThrough Hole   Planar
LEGM25BE120E2H


- IGBTs ROHS
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Leading Energy Availability : 0
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USD 16.4272

Multiples of: 1

                
AFGHL50T65SQDC


IGBT Transistors Hybrid iGBT 650V 50A FS4 with SiC-SBD
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ON Semiconductor Availability : 0
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USD 16.6543

Multiples of: 1

Single650 V1.6 V20 V100 A400 nA Aec - Q101TO - 247 - 3TubeSicThrough Hole268 W- 55 C+ 175 C 
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