About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH20N60UFDTU


IGBT Transistors 600V 20A Field Stop
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USD 1.3039

Multiples of: 30

Single600 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh20n60
NGTB20N120IHLWG


Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Rail
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USD 1.304

Multiples of: 30

 1200 V 20 V40 A   TO - 247Tube Through Hole250 W  Ngtb20n120ihl
IRG4BC30WPBF


Transistor: IGBT; 600V; 23A; 100W; TO220AB
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Infineon Availability : 0
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USD 1.3105

Multiples of: 50

Single600 V2.7 V+/- 20 V23 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
STGWT30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.3125

Multiples of: 1

Single600 V2.3 V20 V60 A250 nA  TO - 3P - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGD10HF60KD


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 1.3125

Multiples of: 2500

Single600 V2.75 V20 V18 A100 nA Aec - Q101DPAK - 3TubeSiSmd/Smt62.5 W- 55 C+ 175 C600 - 650V Igbts
NGB8206ANTF4G


IGBT Transistors IGBT 20A 350V N-CHANNEL
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Littelfuse Availability : 0
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USD 1.3135

Multiples of: 1

 390 V 15 V20 A350 uA  D2PAKCut TapeSiSmd/Smt150 W- 55 C+ 175 CNgb8206a
FGA90N33ATDTU


Fairchild Semiconductor IGBT Transistors 330V 90A PDP Trench
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USD 1.3146

Multiples of: 30

Single330 V +/- 30 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga90n33a
FGB20N60SFD_F085


IGBT Transistors 600V 20A FSP IGBT
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USD 1.3224

Multiples of: 800

Single600 V2.4 V+/- 20 V40 A400 nA208 W D2PAK - 3ReelSiSmd/Smt208 W- 55 C+ 150 CFgb20n60sf
IRG4BC30W-SPBF


IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
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Infineon Availability : 0
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USD 1.3341

Multiples of: 1

Single600 V2.1 V+/- 20 V23 A100 nA100 W D2PAKTube Smd/Smt - 55 C+ 150 C 
IRG4RC10SDPBF


International Rectifier IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT
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Infineon Availability : 0
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USD 1.3375

Multiples of: 1

Single600 V1.7 V+/- 20 V14 A   DPAK - 3TubeSiSmd/Smt38 W- 55 C+ 150 C 
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