About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGA30N65SMD


IGBT Transistors 650V, 30A, Field Stop IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 286
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USD 2.205

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Single650 V2.29 V+/- 20 V60 A400 nA300 W TO - 3PN - 3TubeSiThrough Hole300 W- 55 C+ 175 CFga30n65smd
IXGH48N60A3D1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
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IXYS Availability : 286
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USD 6.7199

Multiples of: 1

 600 V1.18 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
GT30J122A(STA1,E,D


IGBTs TO-3PN RoHS
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Toshiba Availability : 285
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USD 1.271

Multiples of: 1

                
TIG065E8-TL-H


IGBT Transistors HIGH POWER SWITCHING
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ON Semiconductor Availability : 283
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USD 0.0989

Multiples of: 1

Single Quad Collector Triple Emitter400 V4.2 V+/- 4 V150 A10 uA  ECH - 8Reel Smd/Smt - 40 C+ 150 CTig065e8
IXGH2N250


IGBT Transistors IGBT NPT-VERY HI VOLTAGE
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IXYS Availability : 278
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USD 15.26

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   Very High Voltage
Hot FGB3056-F085


IGBT Transistors ECOSPARK IGNITION IGBT
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ON Semiconductor Availability : 276
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USD 1.4282

Multiples of: 1

Single560 V1 V+/- 10 V29 A40 uA  TO - 263ABCut TapeSiSmd/Smt200 W- 40 C+ 175 CFgb3056_F085
IXGH50N90B2D1


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS Availability : 274
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USD 9.2807

Multiples of: 1

Single900 V2.2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole400 W- 55 C+ 150 CIxgh50n90
IXYH20N120C3D1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 274
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USD 11.368

Multiples of: 1

Single1200 V4 V30 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole230 W- 55 C+ 150 CIxyh20n120
IXGA20N120A3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
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IXYS Availability : 271
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USD 5.166

Multiples of: 1

         TubeSi    Ixga20n120
FGH40N60SFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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ON Semiconductor Availability : 269
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USD 2.0985

Multiples of: 1

      116 W         
RGTH60TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM Availability : 268
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USD 2.3378

Multiples of: 1

 650 V1.6 V+/- 30 V58 A+/- 200 nA   TubeSiThrough Hole194 W- 40 C+ 175 CRgth60ts65
IXXH40N65B4


IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
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IXYS Availability : 266
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USD 3.366

Multiples of: 1

Single650 V1.5 V20 V120 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh40n65
IKFW60N65ES5XKSA1


IGBT Trench Field Stop 650V 77A 138W Through Hole PG-HSIP247-3-2
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Infineon Availability : 266
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USD 5.261

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
MBQ40T65QESTH


TO-247 IGBTs ROHS
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Magnachip Availability : 261
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USD 1.0877

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NGTB50N65FL2WG


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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ON Semiconductor Availability : 258
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USD 3.718

Multiples of: 1

                
IGW100N60H3


Transistor: IGBT; 600V; 100A; 714W; TO247-3; Series: H3
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Infineon Availability : 258
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USD 4.686

Multiples of: 1

      714 W   Trenchstop 3    H3
FGA50S110P


Fairchild Semiconductor IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
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ON Semiconductor Availability : 256
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USD 1.507

Multiples of: 1

 1100 V2.7 V25 V50 A500 nA  TO - 3PNTubeSiThrough Hole300 W- 55 C+ 175 CFga50s110p
IGW03N120H2


IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
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Infineon Availability : 256
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USD 2.0286

Multiples of: 1

Single1200 V 20 V    TO - 247 - 3TubeSiThrough Hole - 40 C+ 150 CIgw03n120
AOT10B60D


IGBT 600V 20A 163W TO220
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Alpha & Omega Availability : 253
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USD 1.5435

Multiples of: 1

         -      
IXBH6N170


IGBT Transistors 12 Amps 1700V 3.6 Rds
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IXYS Availability : 182
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USD 6.831

Multiples of: 1

Single1700 V2.3 V20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxbh6n170
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