HP8K22 Datasheet 30V Nch+Nch Power MOSFET llOutline Tr1:Nch Tr2:Nch Symbol V 30V 30V DSS HSOP8 R (Max.) 8.8m 4.6m DS(on) I 27A 57A D P 22W 25W D llFeatures llInner circuit 1) Low on - resistance 2) Pb-free plating RoHS compliant 3) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type DC/DC Converter Quantity (pcs) 2500 Taping code TB Marking HP8K22 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Nch V Drain - Source voltage 30 30 V DSS *1 I 27 57 A D Continuous drain current I 12 20 A D *2 I Pulsed drain current 48 80 A DP Gate - Source voltage V 20 20 V GSS *3 I Avalanche current, single pulse 12 20 A AS *3 Avalanche energy, single pulse E 11.4 32.0 mJ AS *1 P element 22 25 W D Power dissipation *4 total P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/16 20200928 - Rev.003 2020 ROHM Co., Ltd. All rights reserved. HP8K22 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Tr1:Nch - - 5.6 /W thJC Thermal resistance, junction - case *1 R Tr2:Nch - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient total - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage V = 0V, I = 1mA Tr2 30 - - GS D V I = 1mA, referenced to 25 Tr1 - 28 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = 1mA, referenced to 25 j Tr2 - 28 - D V = 24V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = 24V, V = 0V - - 1 DS GS Tr1 V = 20V, V = 0V - - 100 GS DS Gate - Source I nA GSS leakage current Tr2 V = 20V, V = 0V - - 100 GS DS V = V , I = 1mA Tr1 1.3 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = 1mA Tr2 1.3 - 2.5 DS GS D I = 1mA, referenced to 25 V Tr1 - -3.87 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = 1mA, referenced to 25 Tr2 - -3.87 - j D V = 10V, I = 12A - 6.7 8.8 GS D Tr1 V = 4.5V, I = 12A - 9.1 13.3 GS D Static drain - source *5 R m DS(on) on - state resistance V = 10V, I = 20A - 3.6 4.6 GS D Tr2 V = 4.5V, I = 20A - 4.7 7.5 GS D Tr1 1.15 2.3 4.6 Gate resistance R f=1MHz, open drain G Tr2 0.75 1.5 3.0 Tr1 V = 5V, I = 12A 10 - - DS D Forward Transfer *5 Y S fs Admittance Tr2 V = 5V, I = 20A 18 - - DS D *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2/16 20200928 - Rev.003