About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

STGWA40N120KD

IGBT Transistors 40A 1200V short circuit rugged IGBT

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STMicroelectronics

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USD 5.0274

Multiples of: 1

Tube

900 - 1300V Igbts

IRGP4069D-EPBF

International Rectifier IGBT Transistors 600V Low VCEon Trench IGBT

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Infineon

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USD 5.0325

Multiples of: 25

600 V

1.85 V

20 V

76 A

100 nA

TO - 247 - 3

Tube

Through Hole

268 W

IXGH10N170

IGBT Transistors 20 Amps 1700 V 4 V Rds

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IXYS

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USD 5.0331

Multiples of: 1

Single

1700 V

20 V

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixgh10n170

IRG7PH37K10DPBF

IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT

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Infineon

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USD 5.0367

Multiples of: 89

Single

1200 V

2.4 V

+/- 30 V

45 A

100 nA

216 W

TO - 247AC - 3

Tube

Through Hole

216 W

- 40 C

+ 150 C

NGTB75N60FL2WG

Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Rail

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ON Semiconductor

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USD 5.0406

Multiples of: 72

Single

Rail/Tube

Ngtb75n60fl2

SGW15N120FKSA1

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247

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Infineon

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USD 5.042

Multiples of: 1

Single

IXXH30N65B4D1

Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD

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IXYS

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USD 5.0551

Multiples of: 1

Single

TO - 247 - 3

Tube

Through Hole

230 W

- 55 C

+ 175 C

FGA50N100BNTD2

IGBT Transistors N-ch / 50A 1000V

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ON Semiconductor

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USD 5.0604

Multiples of: 1

Single

1000 V

1.5 V

25 V

50 A

500 nA

156 W

TO - 3PN

Tube

Through Hole

156 W

- 55 C

+ 150 C

Fga50n100bnt

IRGP6660D-EPBF

International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247

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Infineon

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USD 5.1127

Multiples of: 1

Single

600 V

1.65 V

20 V

95 A

100 nA

TO - 247AD - 3

Tube

Through Hole

330 W

- 40 C

+ 175 C

IRGP4790PBF

Transistor: IGBT; 650V; 140A; 455W; TO247-3

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Infineon

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USD 5.1155

Multiples of: 1

455 W

IXGH24N60AU1

IGBT Transistors G-series A,B,C

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IXYS

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USD 5.1246

Multiples of: 1

Single

600 V

2.7 V

30 V

48 A

100 nA

150 W

TO - 247 AD

Tube

Through Hole

- 55 C

+ 150 C

Ixgh24n60

IXST30N60B

IGBT Transistors 55 Amps 600V 2 Rds

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IXYS

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USD 5.1363

Multiples of: 1

IRG7PH42UD1MPBF

International Rectifier IGBT Transistors 1200V UltraFast Copack IGBT

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Infineon

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USD 5.1366

Multiples of: 1

Single

1200 V

1.7 V

20 V

85 A

100 nA

TO - 247AD - 3

Tube

Through Hole

313 W

- 55 C

+ 150 C

APT45GR65B2DU30

IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

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Microchip

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USD 5.1854

Multiples of: 1

Tube

APT15GP60BG

IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single

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Microchip

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USD 5.1854

Multiples of: 1

250 W

POWER MOS 7®, PT

IRG4PC50UD

Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC

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Infineon

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USD 5.199

Multiples of: 1

Single

55 A

150 C

NTE3301

Transistor: IGBT; 400V; 15A; 40W; TO220FP

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NTE

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USD 5.2272

Multiples of: 1

40 W

APT50GT60BRDQ2G

IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi

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Microchip

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USD 5.2299

Multiples of: 1

Single

600 V

2 V

30 V

110 A

120 nA

TO - 247 - 3

Tube

Through Hole

446 W

- 55 C

+ 150 C

APT50GS60BRG

IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single

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Microchip

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USD 5.2304

Multiples of: 1

Single

600 V

2.8 V

30 V

93 A

100 nA

TO - 247 - 3

Tube

Through Hole

415 W

- 55 C

+ 150 C

AFGHL75T65SQDT

IGBT Transistors 650V75A FS4 IGBT

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ON Semiconductor

Availability : 0
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May 2025