About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MG100HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie Availability : 1
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USD 39.0321
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APT35GP120J


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 1
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USD 45.4556
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          POWER MOS 7®, PT     
IXGH36N60B3C1


IGBT Transistors 75Amps 600V
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IXYS Availability : 1
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USD 57.6209
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 600 V1.5 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole250 W- 55 C+ 150 CIxgh36n60
IXYN100N120C3H1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 1
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USD 66.6801
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Single1.2 kV2.9 V20 V134 A100 nA  SOT - 227B - 4TubeSiSmd/Smt690 W- 55 C+ 150 CIxyn100n120
KWBW25N120F4EG


IGBTs TO-247 RoHS
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KWKFF450R12SC


IGBTs M2 RoHS
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GD100HFF120C1S


IGBTs RoHS
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EG2181


IGBT SOP-8 RoHS
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EG Availability : 0
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XNA15N60T


IGBTs Field Stop 600V 15A D2pak RoHS
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MGD623S


IGBTs 600V 50A TO3P-3L RoHS
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