About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

IXGH32N60BU1

IGBT Transistors 60 Amps 600V 2.3 Rds

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IXYS

Availability : 0
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USD 6.8445

Multiples of: 1

Single

600 V

+/- 20 V

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixgh32n60

CRGMF75T120FSC

34mm IGBTs ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO

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USD 6.8537

Multiples of: 1

FGL35N120FTDTU

Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT

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ON Semiconductor

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USD 4.726

Multiples of: 1

Tube

Fgl35n120ftd

APT50GS60BRDQ2G

IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi

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Microchip

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USD 6.8616

Multiples of: 60

Single

600 V

2.8 V

30 V

93 A

100 nA

TO - 247 - 3

Tube

Through Hole

415 W

- 55 C

+ 150 C

IRGP20B120UD-EP

IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

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Infineon

Availability : 0
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USD 6.8899

Multiples of: 63

Single

1.2 kV

3.05 V

+/- 20 V

40 A

TO - 247 - 3

Tube

Through Hole

300 W

- 55 C

+ 150 C

IXGH17N100

IGBT Transistors 17 Amps 1000V 4 Rds

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IXYS

Availability : 0
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USD 6.8983

Multiples of: 1

Single

1000 V

+/- 20 V

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixgh17n100

IRG7PH46UPBF

IGBT Transistors 1200V 108A

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Infineon

Availability : 0
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May 2025

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USD 6.9664

Multiples of: 1

Single

1.2 kV

2 V

+/- 30 V

130 A

200 nA

469 W

TO - 247

Tube

Through Hole

469 W

- 55 C

+ 175 C

IRG7PH42UD-EP

IGBT Transistors 1200V Trench IGBT Generic Ind App

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Infineon

Availability : 0
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USD 6.9782

Multiples of: 1

Single

1.2 kV

2 V

+/- 30 V

85 A

320 W

TO - 247

Tube

Through Hole

- 55 C

IRGP4790DPBF

Transistor: IGBT; 650V; 140A; 455W; TO247-3

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Infineon

Availability : 0
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USD 6.9812

Multiples of: 1

455 W

FGY75N60SMD

Transistor: IGBT; 600V; 75A; 375W; TO247

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
Ship by 6 to 16 Weeks

May 2025

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USD 7.0031

Multiples of: 1

375 W

IXXH40N65B4D1

Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
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USD 7.0425

Multiples of: 1

Single

TO - 247 - 3

Tube

Through Hole

455 W

- 55 C

+ 175 C

AIGW50N65F5XKSA1

IGBT Transistors DISCRETES

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Infineon

Availability : 0
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May 2025

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USD 7.056

Multiples of: 1

Single

650 V

1.66 V

30 V

80 A

100 nA

TO - 247 - 3

Tube

Through Hole

270 W

- 40 C

+ 175 C

Trenchstop 5 F5

IXDR35N60BD1

IXYS IGBT Transistors 35 Amps 600V

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IXYS

Availability : 0
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USD 7.0686

Multiples of: 1

Single

600 V

2.2 V

+/- 20 V

38 A

500 nA

Isoplus247 - 3

Tube

Through Hole

125 W

- 55 C

+ 150 C

Ixdr35n60b

APT35GA90BD15

IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi

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Microchip

Availability : 0
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USD 7.0754

Multiples of: 1

290 W

POWER MOS 8®, PT

RK3229

Other Processors and Microcontrollers (MCUs) BGA-316 RoHS

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Rockchip

Availability : 0
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USD 7.0762

Multiples of: 1

IXGR60N60C2D1

IGBT Transistors 48 Amps 600V 2.7 V Rds

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IXYS

Availability : 0
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May 2025

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USD 7.0875

Multiples of: 1

Isoplus247 - 3

Tube

SGL160N60UFTU

IGBT Transistors 600V80A2.0V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
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May 2025

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USD 7.1253

Multiples of: 1

Single

600 V

2.1 V

+/- 20 V

160 A

+/- 100 nA

250 W

TO - 264 - 3

Tube

Through Hole

- 55 C

+ 150 C

Sgl160n60

IXYH40N120C3

IGBT Transistors GenX3 1200V XPT IGBT

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IXYS

Availability : 0
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USD 7.1354

Multiples of: 1

Single

1200 V

3.6 V

30 V

70 A

100 nA

TO - 247AD - 3

Tube

Through Hole

577 W

- 55 C

+ 175 C

Ixyh40n120

IXGH40N120C3

IGBT Transistors 75Amps 1200V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
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May 2025

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USD 7.1872

Multiples of: 1

TO - 247AD - 3

Tube

Ixgh40n120

APT40GR120B

IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 0
Ship by 6 to 16 Weeks

May 2025