Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J11 Dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive(1.5V drive). Abbreviated symbol : J11 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping Type Code TCR (1) Tr1 Source 2 2 (2) Tr1 Gate Basic ordering unit (pieces) 3000 (3) Tr2 Source (4) Tr2 Gate 1 1 TT8J11 (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4) (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage V 0 to 8 V GSS Continuous I 3.5 A D Drain current *1 Pulsed I 12 A DP Continuous I 0.8 A Source current s (Body Diode) *1 Pulsed I 12 A sp 1.25 W / TOTAL P *2 Power dissipation D 1 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit 100 C / W /TOTAL * Channel to Ambient Rth (ch-a) 125 C / W /ELEMENT * Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/6Data Sheet TT8J11 Electrical characteristics (Ta = 25 C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =8V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV =12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =6V, I =1mA GS (th) DS D -31 43 I =3.5A, V =4.5V D GS Static drain-source on-state -43 60 I =1.7A, V =2.5V D GS * R m DS (on) resistance -60 90 I =1.7A, V =1.8V D GS - 80 160 I =0.7A, V =1.5V D GS * Forward transfer admittance l Y l4 - - S I =3.5A, V =6V fs D DS Input capacitance C - 2600 - pF V =6V iss DS Output capacitance C - 200 - pF V =0V oss GS Reverse transfer capacitance C - 190 - pF f=1MHz rss Turn-on delay time t - 15 - ns I =1.7A, V 6V * d(on) D DD Rise time t - 30 - ns V =4.5V * r GS Turn-off delay time t * - 170 - ns R =3.5 d(off) L Fall time t * - 60 - ns R =10 f G Total gate charge Q * - 22 - nC I =3.5A g D Gate-source charge Q - 3.9 - nC V 6V * gs DD Gate-drain charge Q - 3.1 - nC V =4.5V * gd GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I =3.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A