About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT15GP90BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 0
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STGP30H65F


IGBT Transistors Trench gte FieldStop IGBT 600V 30A
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STMicroelectronics Availability : 0
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USD 0.0747
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Single650 V2.4 V+/- 20 V60 A250 nA260 W TO - 220 - 3TubeSiThrough Hole260 W- 55 C+ 175 CStgp30h65f
IRGR4610DPBF


IGBT Transistors 600V TRENCH ULTRAFAST IGBT
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Infineon Availability : 0
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USD 0.1448
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Single600 V1.7 V20 V16 A100 nA77 W DPAKTubeSiSmd/Smt77 W- 40 C+ 175 C 
IRGB4610DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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Infineon Availability : 0
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USD 0.1756
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Single600 V2.14 V+/- 20 V16 A100 nA77 W TO - 220AB - 3BulkSiThrough Hole77 W- 40 C+ 175 C 
NGTB15N60EG


IGBT Transistors 15A 600V IGBT
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ON Semiconductor Availability : 0
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USD 0.1919
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 600 V1.95 V20 V30 A100 nA47 W TO - 220TubeSiThrough Hole47 W  Ngtb15n60eg
NGTB03N60R2DT4G


ON Semiconductor IGBT Transistors RC2 IGBT 3A 600V DPAK
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ON Semiconductor Availability : 0
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USD 0.2182
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Single600 V1.7 V+/- 20 V9 A+/- 100 nA  DPAK - 3ReelSiSmd/Smt49 W + 175 C 
STGP15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss
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STMicroelectronics Availability : 0
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USD 0.2211
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Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220 - 3 SiThrough Hole136 W- 55 C+ 175 CStgp15m65df2
IRG4RC10KDPBF


IGBT Transistors 600V ULTRAFAST 8-25KHZ COPACK IGBT
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Infineon Availability : 0
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USD 0.2258
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Single600 V2.62 V+/- 20 V9 A   DPAK - 3Tube Smd/Smt38 W- 55 C+ 150 C 
STGB30H60DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 0.2471
Multiples of: 4000

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  D2PAK - 3ReelSiSmd/Smt260 W- 55 C+ 175 CStgb30h60dfb
IRG4BC30UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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Infineon Availability : 0
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USD 0.2475
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Single600 V2.1 V+/- 20 V23 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
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