About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AIKW40N65DF5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.282

Multiples of: 1

         TubeSi    Trenchstop 5 F5
IRGP4660DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
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Infineon Availability : 0
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USD 5.2832

Multiples of: 1

Single600 V1.9 V20 V50 A70 uA  TO - 247 - 3TubeSiThrough Hole134 W- 55 C+ 175 CTrenchstop
IXGH30N60B


IGBT Transistors 60 Amps 600V 1.8 Rds
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IXYS Availability : 0
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USD 5.2884

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         -      
IXGH32N60B


IGBT Transistors 60 Amps 600V 2.3 Rds
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IXYS Availability : 0
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USD 5.2884

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Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh32n60
IRG7PH37K10D-EPBF


Transistor: IGBT; 1200V; 45A; 216W; TO247-3
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Infineon Availability : 0
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USD 5.2933

Multiples of: 82

      216 W         
IRGP6690DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon Availability : 0
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USD 5.3016

Multiples of: 71

Single600 V1.65 V20 V140 A200 nA  TO - 247AC - 3TubeSiThrough Hole483 W- 40 C+ 175 C 
APT44GA60B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 0
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USD 5.3127

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Single600 V +/- 30 V78 A+/- 100 nA  TO - 247 - 3 SiThrough Hole337 W- 55 C+ 150 C 
STGW100H65FB2-4


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics Availability : 0
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USD 5.3314

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         Tube      
AUIRGP66524D0


Transistor: IGBT; IGBT Trench; 600V; 40A; 107W; TO247AC
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Infineon Availability : 0
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USD 5.3352

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      107 W   Igbt Trench     
IRGP4660D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
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Infineon Availability : 0
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USD 5.3691

Multiples of: 2

Single600 V1.9 V20 V50 A70 uA  TO - 247 - 3TubeSiThrough Hole134 W- 55 C+ 175 CTrenchstop
IXGP12N100AU1


Trans IGBT Chip N-CH 1KV 24A 3-Pin(3+Tab) TO-220AB
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IXYS Availability : 0
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USD 5.3913

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Single               
IXGH20N140C3H1


IGBT Transistors GenX3 1400V IGBTs w/ Diode
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IXYS Availability : 0
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USD 5.437

Multiples of: 1

Single1400 V4 V+/- 20 V42 A100 nA250 W TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh20n140
FII30-06D


IXYS IGBT Transistors 30 Amps 600V
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IXYS Availability : 0
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USD 5.437

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Dual600 V1.9 V+/- 20 V30 A200 nA  ISOPLUS I4 - PAC - 5TubeSiThrough Hole100 W- 55 C+ 150 CFii30 - 06D
AIKW40N65DH5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.4413

Multiples of: 1

         TubeSi    Trenchstop 5 H5
AIGW50N65H5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 5.4416

Multiples of: 1

Single650 V1.66 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 H5
IXGH41N60


IGBT Transistors 76 Amps 600V 1.6 Rds
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IXYS Availability : 0
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USD 5.444

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh41n60
FGH60T65SQD-F155


IGBT Transistors 650V 60A FS4 TRENCH
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ON Semiconductor Availability : 0
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USD 5.4743

Multiples of: 1

Single650 V1.6 V20 V120 A400 nA  TO - 247 - 3Tube Through Hole333 W- 55 C+ 175 C 
FGH75T65SHDTL4


IGBT Transistors FS3 TIGBT Excellent switching performan
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ON Semiconductor Availability : 0
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USD 5.4889

Multiples of: 1

Single650 V1.6 V+/- 20 V150 A400 nA  TO - 247 - 4BulkSiThrough Hole455 W- 55 C+ 175 CFgh75t65shdtl4
IRGP4263DPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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Infineon Availability : 0
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USD 5.4961

Multiples of: 1

Single650 V1.7 V20 V90 A100 nA  TO - 247AC - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
IXXH50N60C3


IGBT Transistors XPT IGBT C3-Class 600V/100 Amp
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IXYS Availability : 0
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USD 5.5009

Multiples of: 1

 600 V2.3 V20 V100 A100 nA  TO - 247ADTubeSiThrough Hole600 W- 55 C+ 150 CIxxh50n60
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